Emission-wavelength tuning of InAs quantum dots grown on nitrogen-δ-doped GaAs(001)

被引：0
|
作者：
Kaizu, Toshiyuki [1 ,2 ]
Taguchi, Kohei [2 ]
Kita, Takashi [2 ]
机构：
[1] Center for Supports to Research and Education Activities, Kobe University, 1-1 Rokkodai, Nada, Kobe,657-8501, Japan
[2] Department of Electrical and Electronic Engineering, Faculty of Engineering, Kobe University, 1-1 Rokkodai, Nada, Kobe,657-8501, Japan
来源：
Journal of Applied Physics | 2016年 / 119卷 / 19期
基金：
日本学术振兴会;
关键词：
Nanocrystals - Piezoelectricity - Binary alloys - Nitrogen - Semiconductor quantum dots - Indium arsenide - III-V semiconductors - Semiconducting gallium;
D O I：
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学科分类号：
摘要：
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