Thermodynamics and kinetics of H adsorption and intercalation for graphene on 6 H -SiC(0001) from first-principles calculations

被引：0
|
作者：
Han, Yong [1 ,2 ]
Evans, James W. [1 ,2 ]
Tringides, Michael C. [1 ,2 ]
机构：
[1] Ames Laboratory, U.S. Department of Energy, Ames,IA,50011, United States
[2] Department of Physics and Astronomy, Iowa State University, Ames,IA,50011, United States
来源：
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films | 2022年 / 40卷 / 01期
关键词：
Compendex;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Graphene
引用
收藏
相关论文
共 50 条
  • [41] First-principles calculations of ethanethiol adsorption and decomposition on GaN (0001) surface
    Hu, Chun-Li
    Chen, Yong
    Li, Jun-Qian
    Zhang, Yong-Fan
    APPLIED SURFACE SCIENCE, 2008, 254 (20) : 6514 - 6520
  • [42] Tailoring Electronic Properties of 6H-SiC with Different Composition of Silicon by First-Principles Calculations
    Sharif, Muhammad N.
    Yang, Jingshu
    Zhang, Xiaokun
    Tang, Yehua
    Yang, Gui
    Wang, Ke-Fan
    ADVANCED THEORY AND SIMULATIONS, 2024, 7 (06)
  • [43] First-principles study on the adsorption and dissociation of H2 molecules on Be(0001) surfaces
    Sun, Qingqiang
    Yang, Tianle
    Yang, Li
    Fan, Kaimin
    Peng, Shuming
    Long, Xinggui
    Zhou, Xiaosong
    Zu, Xiaotao
    Du, Jincheng
    COMPUTATIONAL MATERIALS SCIENCE, 2016, 117 : 251 - 258
  • [44] Oxygen adsorption on Graphene/GaN (0001) surface: A first-principles study
    Herrera-Rodriguez, F.
    Martinez-Aguilar, E.
    Guerrero-Sanchez, J.
    Rodriguez, J. A.
    Moreno-Armenta, M. G.
    SURFACE SCIENCE, 2019, 690
  • [45] Kinetics and mechanism of the OH+C6H6 reaction:: A detailed analysis with first-principles calculations
    Tokmakov, IV
    Lin, MC
    JOURNAL OF PHYSICAL CHEMISTRY A, 2002, 106 (46): : 11309 - 11326
  • [46] Adsorption and desorption kinetics of gallium atoms on 6H-SiC(0001) surfaces
    Zheng, LX
    Xie, MH
    Tong, SY
    PHYSICAL REVIEW B, 2000, 61 (07): : 4890 - 4893
  • [47] First-principles calculations of Cu adsorption on an H-terminated Si surface
    Foster, A. S.
    Gosalvez, M. A.
    Hynninen, T.
    Nieminen, R. M.
    Sato, K.
    PHYSICAL REVIEW B, 2007, 76 (07)
  • [48] Electronic properties of an epitaxial silicon oxynitride layer on a 6H-SiC(0001) surface:: A first-principles investigation
    Devynck, Fabien
    Sljivancanin, Z.
    Pasquarello, Alfredo
    APPLIED PHYSICS LETTERS, 2007, 91 (06)
  • [49] Charge-neutral epitaxial graphene on 6H-SiC(0001) via FeSi intercalation
    Luo, Xingyun
    Liang, Guojun
    Sun, Xiucai
    Li, Yanlu
    Yu, Fapeng
    Wei, Lei
    Cheng, Xiufeng
    Sun, Li
    Zhao, Xian
    CARBON, 2020, 156 (156) : 187 - 193
  • [50] Detailed studies of Na intercalation on furnace-grown graphene on 6H-SiC(0001)
    Xia, C.
    Watcharinyanon, S.
    Zakharov, A. A.
    Johansson, L. I.
    Yakimova, R.
    Virojanadara, C.
    SURFACE SCIENCE, 2013, 613 : 88 - 94
12345