Application of two-dimensional layered hexagonal boron nitride in chip cooling

被引：0

作者：

Bao J. ^{[1
,2
]}

Zhang Y. ^{[1
,3
]}

Huang S. ^{[1
,2
]}

Sun S. ^{[3
]}

Lu X. ^{[1
]}

Fu Y. ^{[3
,4
]}

Liu J. ^{[1
,3
]}

机构：

[1] SMIT Center, School of Automation and Mechanical Engineering, Nanomicro Research Institute and Shanghai University, Shanghai

[2] School of Mechanical and Electrical Engineering, Huangshan University, Huangshan

[3] Department of Microtechnology and Nanoscience, Chalmers University of Technology, Kemivagen 9, Gothenburg

[4] SHT Smart High Tech AB, Gothenburg

来源：

Yingyong Jichu yu Gongcheng Kexue Xuebao/Journal of Basic Science and Engineering | 2016年 / 24卷 / 01期

关键词：

Boron nitride; Heat dissipation; Single layer; Thermal evaluation chip;

D O I：

10.16058/j.issn.1005-0930.2016.01.020

中图分类号：

学科分类号：

摘要：

Research into layered hexagonal boron nitride(h-BN)has recently intensified, due to its superior physicochemical properties compared to that of a typical two-dimensional material. H-BN can be utilized in power chips as both an insulating layer as well as a heat spreader for local hotspots with high heat flux. Single layer h-BN film grown by CVD and h-BN microparticles are respectively transferred onto the surfaces of the thermal evaluation chips, where the influence of h-BN on the heat dissipation performance of the chips can be observed at different power values. The resistance-temperature curve method and infrared thermal imager are both used to measure the temperature of hotspots on the thermal evaluation chips, which can be reduced by between 3~5℃ at 1W after the transfer of h-BN. The cooling efficiency is improved and it can be found that single layer h-BN film shows better heat dissipation ability. © 2016, The Editorial Board of Journal of Basic Science and Engineering. All right reserved.

引用

页码：210 / 217

页数：7

共 12 条

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