Application of two-dimensional layered hexagonal boron nitride in chip cooling

被引:0
|
作者
Bao J. [1 ,2 ]
Zhang Y. [1 ,3 ]
Huang S. [1 ,2 ]
Sun S. [3 ]
Lu X. [1 ]
Fu Y. [3 ,4 ]
Liu J. [1 ,3 ]
机构
[1] SMIT Center, School of Automation and Mechanical Engineering, Nanomicro Research Institute and Shanghai University, Shanghai
[2] School of Mechanical and Electrical Engineering, Huangshan University, Huangshan
[3] Department of Microtechnology and Nanoscience, Chalmers University of Technology, Kemivagen 9, Gothenburg
[4] SHT Smart High Tech AB, Gothenburg
关键词
Boron nitride; Heat dissipation; Single layer; Thermal evaluation chip;
D O I
10.16058/j.issn.1005-0930.2016.01.020
中图分类号
学科分类号
摘要
Research into layered hexagonal boron nitride(h-BN)has recently intensified, due to its superior physicochemical properties compared to that of a typical two-dimensional material. H-BN can be utilized in power chips as both an insulating layer as well as a heat spreader for local hotspots with high heat flux. Single layer h-BN film grown by CVD and h-BN microparticles are respectively transferred onto the surfaces of the thermal evaluation chips, where the influence of h-BN on the heat dissipation performance of the chips can be observed at different power values. The resistance-temperature curve method and infrared thermal imager are both used to measure the temperature of hotspots on the thermal evaluation chips, which can be reduced by between 3~5℃ at 1W after the transfer of h-BN. The cooling efficiency is improved and it can be found that single layer h-BN film shows better heat dissipation ability. © 2016, The Editorial Board of Journal of Basic Science and Engineering. All right reserved.
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页码:210 / 217
页数:7
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