Epitaxial growth of 3C–SiC on Si(111) and (001) by laser CVD

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作者：
机构：
[1] Zhu, Peipei
[2] Yang, Meijun
[3] Xu, Qingfang
[4] Sun, Qingyun
[5] Tu, Rong
[6] Li, Jun
[7] Zhang, Song
[8] Li, Qizhong
[9] Zhang, Lianmeng
[10] 1,Goto, Takashi
[11] 1,Shi, Ji
[12] 1,Li, Haiwen
[13] Ohmori, Hitoshi
[14] Kosinova, Marina
[15] Basu, Bikramjit
来源：
Zhang, Song (kobe@whut.edu.cn) | 1600年 / Blackwell Publishing Inc.卷 / 101期
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摘要：
Silicon carbide
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