MBE grown antimonide mid-infrared lasers and photodetectors

被引：0
|
作者：
Li, A.Z. [1 ]
Zheng, Y.L. [1 ]
Lin, C. [1 ]
机构：
[1] Shanghai Inst. of Metallurgy, Chinese Acad. of Sci., Shanghai 200050, China
来源：
Cailiao Yanjiu Xuebao/Chinese Journal of Materials Research | 2001年 / 15卷 / 01期
关键词：
Infrared devices - Molecular beam epitaxy - Semiconductor lasers - Semiconductor quantum wells;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Quaternary antimonides including single layer and multiple quantum wells for mid-infrared lasers and detectors were successfully grown on GaSb substrate by solid source molecular beam epitaxy. 2μm AlGaAsSb/InGaAsSb multiple quantum well were also fabricated.
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页码：29 / 32
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