Oxygen vacancy induced electrical conductivity enhancement in Ca-doped BiFeO3 thin films

被引：0
|
作者：
Zhang, Tong [1 ]
Zhao, Wenhai [1 ]
Wu, Qiqian [1 ]
Yin, Cong [1 ]
Zhao, Mi [1 ]
Li, Zhidong [1 ]
Wu, Liang [1 ]
Zhang, Hui [1 ]
Yang, Sheng'an [1 ]
Chen, Qingming [1 ,2 ]
Yi, Jianhong [1 ,2 ]
Ma, Ji [1 ,2 ]
机构：
[1] Faculty of Materials Science and Engineering, Kunming University of Science and Technology, Yunnan, Kunming,650093, China
[2] Southwest United Graduate School, Yunnan, Kunming,650500, China
来源：
Journal of Alloys and Compounds | 2024年 / 1008卷
基金：
中国国家自然科学基金;
关键词：
Bismuth ferrite; recognized for its exceptional physical properties as a multiferroic material; has recently attracted considerable attention due to its high domain wall conduction. However; challenges in further improving domain wall conductivity and magnetoelectric coupling hamper the practical application of pure-phase BFO thin films. Addressing these limitations; we successfully synthesized Bi1-xCaxFeO3 thin films on LaAlO₃ (001) substrates with varied calcium (Ca) doping levels (x = 0–0.3) through pulsed laser deposition. Our experimental data demonstrate a direct relationship between the films' electrical conductivity and the prevalence of oxygen vacancies (OV). An upward trend in both OV density and electrical conductivity emerges with incremental Ca doping; peaking at x = 0.2. Beyond this doping threshold; a further increase in Ca concentration inversely affects OV density and electrical conductivity. These insights suggest that fine-tuning OV concentration in Ca-doped BFO thin films can significantly modulate their electrical properties; paving the way for the advancement of bismuth ferrite-based electronic devices. © 2024 Elsevier B.V;
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