Epitaxial growth of high-tech perovsky-phased films by off-axis magnetron sputtering
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作者:
Yu, Guo
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State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology, Chengdu 610054, ChinaState Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology, Chengdu 610054, China
Yu, Guo
[1
]
Bai, Feiming
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State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology, Chengdu 610054, ChinaState Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology, Chengdu 610054, China
Bai, Feiming
[1
]
Wen, Dandan
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State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology, Chengdu 610054, ChinaState Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology, Chengdu 610054, China
Wen, Dandan
[1
]
Zhang, Huaiwu
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State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology, Chengdu 610054, ChinaState Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology, Chengdu 610054, China
Zhang, Huaiwu
[1
]
机构:
[1] State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology, Chengdu 610054, China
Development trends - Film materials - Growth techniques - High temperature superconducting - Off-axis - Re-sputtering - Secondary electrons - Sputtering technology;
D O I:
10.3969/j.issn.1672-7126.2013.06.14
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摘要:
The latest progress in the epitaxial growth of perovsky-phased films by off-axis magnetron sputtering, especially in deposition of the advanced, high-tech film materials, was tentatively reviewed in a thought provoking way. The discussions with specific examples focused on: i) the development trends of the off-axis magnetron sputtering technology; ii) the many advantages of the off-axis magnetron sputtering over other conventional epitaxial growth techniques, for instance, a significant reduction of the impact of re-sputtering originated from secondary electrons and negative ions; and iii) the wide applications of the conventional off-axis magnetron sputtering in epitaxial growth of a variety of advanced film-materials, such as the high temperature superconducting (YBa2Cu3O7-x, YBCO), piezoelectric ceramics (Pb(ZrTi)O3), and ferroelectric ceramics (BiFeO3) materials.
机构:Chosun Univ, Res Inst Energy Resources Technol, Kwangju 501759, South Korea
Ryu, HW
Choi, GP
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机构:Chosun Univ, Res Inst Energy Resources Technol, Kwangju 501759, South Korea
Choi, GP
Hong, GJ
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机构:Chosun Univ, Res Inst Energy Resources Technol, Kwangju 501759, South Korea
Hong, GJ
Park, JS
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机构:
Chosun Univ, Res Inst Energy Resources Technol, Kwangju 501759, South KoreaChosun Univ, Res Inst Energy Resources Technol, Kwangju 501759, South Korea
Park, JS
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS,
2004,
43
(8A):
: 5524
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5525
机构:
Zhejiang Normal Univ, Coll Math Phys & Informat Engn, Jinhua 321004, Peoples R China
Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R ChinaZhejiang Normal Univ, Coll Math Phys & Informat Engn, Jinhua 321004, Peoples R China
Si, Jianxiao
Zhao, Ji
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Zhejiang Normal Univ, Coll Math Phys & Informat Engn, Jinhua 321004, Peoples R ChinaZhejiang Normal Univ, Coll Math Phys & Informat Engn, Jinhua 321004, Peoples R China
Zhao, Ji
Ding, Guangchao
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Zhejiang Normal Univ, Coll Math Phys & Informat Engn, Jinhua 321004, Peoples R ChinaZhejiang Normal Univ, Coll Math Phys & Informat Engn, Jinhua 321004, Peoples R China
Ding, Guangchao
Wu, Haifei
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机构:
Shaoxing Univ, Dept Phys, Shaoxing 312000, Peoples R ChinaZhejiang Normal Univ, Coll Math Phys & Informat Engn, Jinhua 321004, Peoples R China
机构:
Pusan Natl Univ, Dept Phys, Pusan 609735, South Korea
Pusan Natl Univ, Res Ctr Dielect & Adv Matter Phys, Pusan 609735, South KoreaPusan Natl Univ, Dept Phys, Pusan 609735, South Korea
Kwon, Daeyoung
Wu, Youngsu
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Pusan Natl Univ, Dept Phys, Pusan 609735, South Korea
Pusan Natl Univ, Res Ctr Dielect & Adv Matter Phys, Pusan 609735, South KoreaPusan Natl Univ, Dept Phys, Pusan 609735, South Korea
Wu, Youngsu
Kim, Bongju
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Pusan Natl Univ, Dept Phys, Pusan 609735, South Korea
Pusan Natl Univ, Res Ctr Dielect & Adv Matter Phys, Pusan 609735, South KoreaPusan Natl Univ, Dept Phys, Pusan 609735, South Korea
Kim, Bongju
Kim, Bog G.
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Pusan Natl Univ, Dept Phys, Pusan 609735, South Korea
Pusan Natl Univ, Res Ctr Dielect & Adv Matter Phys, Pusan 609735, South Korea
Univ Tokyo, Dept Adv Mat Sci, Chiba 2778561, JapanPusan Natl Univ, Dept Phys, Pusan 609735, South Korea
Kim, Bog G.
Hwang, Harold Y.
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Univ Tokyo, Dept Adv Mat Sci, Chiba 2778561, Japan
Japan Sci & Technol Agcy, Kawaguchi, Saitama 3320012, JapanPusan Natl Univ, Dept Phys, Pusan 609735, South Korea