InNAsSb single crystals with cutoff wavelength of 11-13.5 μm grown by melt epitaxy

被引：0
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作者：
Gao, Yu Zhu [1 ]
Yamaguchi, Tomuo [2 ]
Gong, Xiu Ying [1 ]
Kan, Hirofumi [3 ]
Aoyama, Mitsuru [2 ]
Dai, Ning [1 ]
机构：
[1] Gao, Yu Zhu
[2] Yamaguchi, Tomuo
[3] Gong, Xiu Ying
[4] Kan, Hirofumi
[5] Aoyama, Mitsuru
[6] Dai, Ning
来源：
Gao, Y.Z. | 1600年 / Japan Society of Applied Physics卷 / 42期
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页码：4203 / 4206
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