Magnetoluminescence study of annealing effects on the electronic structure of self-organized InGaAs/GaAs quantum dots

被引：0

作者：

Goni, A.R. ^{[1
]}

Born, H. ^{[1
]}

Heitz, R. ^{[1
]}

Hoffmann, A. ^{[1
]}

Thomsen, C. ^{[1
]}

Heinrichsdorff, F. ^{[1
]}

Bimberg, D. ^{[1
]}

机构：

[1] Technische Universitaet Berlin, Berlin, Germany

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers | 2000年 / 39卷 / 7 A期

关键词：

Compendex;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Annealing - Electronic density of states - Electronic structure - Excitons - Ground state - Magnetic field effects - Mathematical models - Metallorganic chemical vapor deposition - Photoluminescence - Semiconducting gallium arsenide - Semiconducting indium gallium arsenide

引用

页码：3907 / 3914

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