A simplified joint density of states analysis of hydrogenated amorphous silicon

被引：0

作者：

O'Leary, Stephen K. ^{[1
]}

Malik, Saad M. ^{[1
]}

机构：

[1] Faculty of Engineering, University of Regina, Regina, SK S4S 0A2, Canada

来源：

| 1600年 / American Institute of Physics Inc.卷 / 92期

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[21] INFLUENCE OF NITROGEN INCORPORATION ON THE DENSITY OF GAP STATES IN AMORPHOUS HYDROGENATED SILICON
MEAUDRE, M
MEAUDRE, R
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1987, 55 (03): : 417 - 426
[22] Defect transition energies and the density of electronic states in hydrogenated amorphous silicon
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[23] SPECIFIC DISPLACEMENTS OF CARRIERS AND DENSITY OF STATES IN HYDROGENATED AMORPHOUS-SILICON
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[24] Study of photoinduced changes in density of gap states in hydrogenated amorphous silicon
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[25] DENSITY OF STATES AND CHARGE-DISTRIBUTION IN HYDROGENATED AMORPHOUS-SILICON
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[26] DENSITY OF STATES FROM JUNCTION MEASUREMENTS IN HYDROGENATED AMORPHOUS-SILICON
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[27] DENSITY OF ELECTRON-STATES OF INTRINSIC HYDROGENATED AMORPHOUS-SILICON
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[28] DENSITY OF STATES NEAR MID GAP IN HYDROGENATED AMORPHOUS-SILICON
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[29] The density of states and the absorption coefficient in intrinsic hydrogenated amorphous silicon films
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[30] The density of states in the mobility gap of amorphous hydrogenated silicon doped with erbium
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