Hall mobilities in B-doped strained Si1-xGex and Si1-x-yGexCy layers grown by ultrahigh vacuum chemical vapor deposition

被引：0
|
作者：
机构：
来源：
| 1600年 / American Inst of Physics, Woodbury, NY, USA卷 / 88期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [31] Hole mobilities in pseudomorphic Si1-x-yGexCy alloy layers
    Duschl, R
    Seeberger, H
    Eberl, K
    THIN SOLID FILMS, 1998, 336 (1-2) : 336 - 339
  • [32] Vacuum science considerations for rapid reactor recovery with extremely low oxygen in low temperature low pressure chemical vapor deposition of Si1-xGex and Si1-x-yGexCy films
    Enicks, D
    Oleszek, G
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2006, 24 (03): : 467 - 473
  • [33] Comparative study on dry oxidation of heteroepitaxial Si1-xGex and Si1-x-yGexCy on Si(100)(+)
    Xiang, J
    Herbots, N
    Jacobsson, H
    Ye, P
    Hearne, S
    Whaley, S
    JOURNAL OF APPLIED PHYSICS, 1996, 80 (03) : 1857 - 1866
  • [34] Characterization of Si1-xGex epilayers grown using a commercially available ultrahigh vacuum chemical vapor deposition reactor
    Lafontaine, H
    Houghton, DC
    Elliot, D
    Rowell, NL
    Baribeau, JM
    Laframboise, S
    Sproule, GI
    Rolfe, SJ
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1996, 14 (03): : 1675 - 1681
  • [35] Characterization of Si1-xGex epilayers grown using a commercially available ultrahigh vacuum chemical vapor deposition reactor
    Lafontaine, H.
    Houghton, D.C.
    Elliot, D.
    Rowell, N.L.
    Baribeau, J.-M.
    Laframboise, S.
    Sproule, G.I.
    Rolfe, S.J.
    Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena, 1996, 14 (03):
  • [36] PHOTOLUMINESCENCE FROM SI1-XGEX STRAINED LAYERS GROWN BY ATMOSPHERIC-PRESSURE CHEMICAL VAPOR-DEPOSITION
    ROWELL, NL
    NOEL, JP
    WANG, A
    NAMAVAR, E
    PERRY, CH
    SOREF, RA
    JOURNAL OF APPLIED PHYSICS, 1992, 71 (12) : 6201 - 6203
  • [37] Thermal stability of Si/Si1-x-yGexCy/Si quantum wells grown by rapid thermal chemical vapor deposition
    Liu, CW
    Tseng, YD
    Chern, MY
    Chang, CL
    Sturm, JC
    JOURNAL OF APPLIED PHYSICS, 1999, 85 (04) : 2124 - 2128
  • [38] Carbon incorporation in epitaxial Si1-x-yGexCy layers grown on (100)Si by rapid thermal chemical vapor deposition using methylsilane
    Mi, J
    Warren, P
    Letourneau, P
    Judelewicz, M
    Dutoit, M
    PROCEEDINGS OF THE THIRTEENTH INTERNATIONAL CONFERENCE ON CHEMICAL VAPOR DEPOSITION, 1996, 96 (05): : 330 - 335
  • [39] High quality Si1-x-yGexCy epitaxial layers grown on (100) Si by rapid thermal chemical vapor deposition using methylsilane
    Appl Phys Lett, 2 (259):
  • [40] Band offset predictions for strained group IV alloys:: Si1-x-yGexCy on Si(001) and Si1-xGex on Si1-zGez(001)
    Galdin, S
    Dollfus, P
    Aubry-Fortuna, V
    Hesto, P
    Osten, HJ
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2000, 15 (06) : 565 - 572
12345