Hall mobilities in B-doped strained Si1-xGex and Si1-x-yGexCy layers grown by ultrahigh vacuum chemical vapor deposition

被引：0
|
作者：
机构：
来源：
| 1600年 / American Inst of Physics, Woodbury, NY, USA卷 / 88期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [1] Hall mobilities in B-doped strained Si1-xGex and Si1-x-yGexCy layers grown by ultrahigh vacuum chemical vapor deposition
    Kar, GS
    Dhar, A
    Ray, SK
    John, S
    Banerjee, SK
    JOURNAL OF APPLIED PHYSICS, 2000, 88 (04) : 2039 - 2042
  • [2] Temperature dependence of Hall mobility in strained Si1-xGex/Si1-x-yGexCy
    Kar, GS
    Dhar, A
    Ray, SK
    PROCEEDING OF THE TENTH INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES, VOLS I AND II, 2000, 3975 : 395 - 398
  • [3] Surface roughening of tensilely strained Si1-x-yGexCy films grown by ultrahigh vacuum chemical vapor deposition
    Calmes, C
    Bouchier, D
    Débarre, D
    Clerc, C
    APPLIED PHYSICS LETTERS, 2002, 81 (15) : 2746 - 2748
  • [4] Properties of Si1-x-yGexCy epitaxial films grown by ultrahigh vacuum chemical vapor deposition
    John, S
    Quinones, EJ
    Ferguson, B
    Ray, SK
    Anantharam, B
    Middlebrooks, S
    Mullins, CB
    Ekerdt, J
    Rawlings, J
    Banerjee, SK
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1999, 146 (12) : 4611 - 4618
  • [5] Growth of strained Si and strained Ge heterostructures on relaxed Si1-xGex by ultrahigh vacuum chemical vapor deposition
    Lee, ML
    Pitera, AJ
    Fitzgerald, EA
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2004, 22 (01): : 158 - 164
  • [6] Strain Control of Si and Si1-x-yGexCy Layers in Si/Si1-x-yGexCy/Si Heterostructures by Low-Pressure Chemical Vapor Deposition
    Murota, Junichi
    Kikuchi, Tomohira
    Hasegawa, Jiro
    Sakuraba, Masao
    SIGE, GE, AND RELATED COMPOUNDS 5: MATERIALS, PROCESSING, AND DEVICES, 2012, 50 (09): : 245 - 254
  • [7] Measurement of band offsets in Si/Si1-xGex and Si/Si1-x-yGexCy heterojunctions
    Stein, BL
    Yu, ET
    Croke, ET
    Hunter, AT
    Laursen, T
    Bair, AE
    Mayer, JW
    Ahn, CC
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1997, 15 (04): : 1108 - 1111
  • [8] Growth of Si1-x-yGexCy alloy layers on Si by chemical vapor deposition using ethylene
    Zheng, YD
    Jiang, N
    Han, P
    Gu, SL
    Zhu, SM
    Jiang, RL
    Shi, Y
    Lu, WF
    Shen, B
    Zhang, R
    GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY, 2004, 95-96 : 243 - 248
  • [9] Ellipsometric investigation of strain reduction in Si1-x-yGexCy layers compared to Si1-xGex layers on silicon
    Mukerjee, S
    Venkataraman, V
    SOLID-STATE ELECTRONICS, 2001, 45 (11) : 1875 - 1877
  • [10] Dependence of substitutional C incorporation on Ge content for Si1-x-yGexCy crystals grown by ultrahigh vacuum chemical vapor deposition
    Kanzawa, Y
    Nozawa, K
    Saitoh, T
    Kubo, M
    APPLIED PHYSICS LETTERS, 2000, 77 (24) : 3962 - 3964
12345