Modeling of frequency dispersion at low frequency for GaN HEMT

被引：0
|
作者：
20151500741050
机构：
来源：
(1) Information Technology RandD Center, Mitsubishi Electric Corporation, 5-1-1 Ofuna, Kamakura, Kanagawa; 247-8501, Japan; (2) Advanced Technology RandD Center, Mitsubishi Electric Corporation, 8-1-1 Tsukaguchihoncyo, Amagasaki, Hyogo; 661-8661, Japan; (3) High Frequency and Optical Device Works, Mitsubishi Electric Corporation, 4-1 Mizuhara, Itami, Hyogo; 664-8641, Japan | 1600年 / et al.; IEEE Sendai Section, The Japan Institute of Electronics Packaging; The Institute of Electronics, Information and Communication Engineers (IEICE); The Technical Committee on Electronics Simulation Technology, Electronics Society, IEICE; The Technical Committee on Microwave Photonics, Electronics Society, IEICE; The Technical Committee on Microwaves, Electronics Society, IEICE卷 / Institute of Electrical and Electronics Engineers Inc.期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
111713
引用
收藏
相关论文
共 50 条
  • [21] W-Band GaN HEMT Frequency Multipliers
    Sonnenberg, Timothy
    Verploegh, Shane
    Pinto, Mauricio
    Popovic, Zoya
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2023, 71 (10) : 4327 - 4336
  • [22] Low frequency noise in HEMT structure
    Han, IK
    Lee, JI
    Brini, J
    Chovet, A
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2001, 39 : S322 - S326
  • [23] Thermal response for intermodulation distortion components of GaN HEMT for low and high frequency applications
    Alim, Mohammad A.
    Ali, Mayahsa M.
    Rezazadeh, Ali A.
    Gaquiere, C.
    MICROELECTRONIC ENGINEERING, 2019, 209 : 53 - 59
  • [24] Frequency Dispersion of Drain Conductance in AlGaN/GaN HEMT Evaluated Using Sinusoidal Wave Signal Input
    Wakejima, Akio
    Yamada, Takashi
    Narita, Tomotaka
    Ando, Akihiro
    Egawa, Takashi
    2013 IEEE COMPOUND SEMICONDUCTOR INTEGRATED CIRCUIT SYMPOSIUM (CSICS): INTEGRATED CIRCUITS IN GAAS, INP, SIGE, GAN AND OTHER COMPOUND SEMICONDUCTORS, 2013,
  • [25] Physical Modeling and Optimization of a GaN HEMT design with a Field Plate Structure for High Frequency Application
    Cucak, D.
    Vasic, M.
    Garcia, O.
    Bouvier, Y.
    Oliver, J.
    Alou, P.
    Cobos, J. A.
    Wang, A.
    Martin-Horcajo, S.
    Romero, F.
    Calle, F.
    2014 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE), 2014, : 2857 - 2864
  • [26] Fabrication and comparative study of DC and low frequency noise characterization of GaN/AlGaN based MOS-HEMT and HEMT
    Hasan, Md Rezaul
    Motayed, Abhishek
    Fahad, Md Shamiul
    Rao, Mulpuri V.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2017, 35 (05):
  • [27] Modeling the frequency dispersion phenomena in GaN and GaAs devices for broadband data communication
    Rafael-Valdivia, G.
    Su, Zhiguo
    Urquizo, Anthony
    Mendoza, Thalia
    2014 IEEE LATIN-AMERICA CONFERENCE ON COMMUNICATIONS (LATINCOM), 2014,
  • [28] Characterization and modeling of traps and RF frequency dispersion in AlGaN/AlN/GaN HEMTs
    Sanchez-Martin, Hector
    Garcia-Perez, Oscar
    Iniguez-de-la-Torre, Ignacio
    Perez, Susana
    Gonzalez, Tomas
    Mateos, Javier
    Altuntas, Philippe
    Defrance, Nicolas
    Lesecq, Marie
    Hoel, Virginie
    Cordier, Yvon
    Rennesson, Stephanie
    2016 11TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC), 2016, : 157 - 160
  • [29] Low-frequency noise in AlGaN/GaN HEMT structures with AlN thin film layer
    Vitusevich, S. A.
    Antoniuk, O. A.
    Petrychuk, M. V.
    Danylyuk, S. V.
    Kurakin, A. M.
    Belyaev, A. E.
    Klein, N.
    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 6, 2006, 3 (06): : 2329 - 2332
  • [30] Comparison of GaN HEMT Technology Processes by Large-Signal Low-Frequency Measurements
    Kikuchi, Ken
    Yamamoto, Hiroshi
    Ui, Norihiko
    Inoue, Kazutaka
    Vadala, Valeria
    Bosi, Gianni
    Raffo, Antonio
    Vannini, Giorgio
    INTERNATIONAL WORKSHOP ON INTEGRATED NONLINEAR MICROWAVE AND MILLIMETRE-WAVE CIRCUITS (INMMIC), 2018,
12345