Experimental evaluation of inductively coupled plasma deep silicon etching

被引：0

作者：

Xu, Gaobin ^{[1
]}

Huang, Hua ^{[1
]}

Zhan, Minghao ^{[1
,2
]}

Huang, Xiaoli ^{[2
]}

Wang, Wenjing ^{[2
]}

Hu, Xiao ^{[1
]}

Chen, Xing ^{[1
]}

机构：

[1] Micro Electromechanical System Reaserch Center of Engineering and Technology of Anhui Province, School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei 230009, China

[2] Norinco Group, North General Electronics Group Co., Ltd, Bengbu 233042, China

来源：

Zhenkong Kexue yu Jishu Xuebao/Journal of Vacuum Science and Technology | 2013年 / 33卷 / 08期

关键词：

Deep silicon etching - Etching rate - Experimental evaluation - High-aspect-ratio-etching - ICP etching - Inductively coupled plasma (ICP) - Micro electromechanical system (MEMS) - Process parameters;

D O I：

10.3969/j.issn.1672-7126.2013.08.21

中图分类号：

学科分类号：

摘要：

引用

页码：832 / 835

共 50 条

[1] Deep silicon etching in inductively coupled plasma reactor for MEMS
Kiihamäki, J
Franssila, S
[J]. PHYSICA SCRIPTA, 1999, T79 : 250 - 254
[2] Geometrical pattern effect on silicon deep etching by an inductively coupled plasma system
Chung, CK
[J]. JOURNAL OF MICROMECHANICS AND MICROENGINEERING, 2004, 14 (04) : 656 - 662
[3] Etching through silicon wafer in inductively coupled plasma
Franssila, S
Kiihamäki, J
Karttunen, J
[J]. MICROSYSTEM TECHNOLOGIES-MICRO-AND NANOSYSTEMS-INFORMATION STORAGE AND PROCESSING SYSTEMS, 2000, 6 (04): : 141 - 144
[4] Etching through silicon wafer in inductively coupled plasma
S. Franssila
J. Kiihamäki
J. Karttunen
[J]. Microsystem Technologies, 2000, 6 : 141 - 144
[5] FAST ANISOTROPIC ETCHING OF SILICON IN AN INDUCTIVELY COUPLED PLASMA REACTOR
PERRY, AJ
BOSWELL, RW
[J]. APPLIED PHYSICS LETTERS, 1989, 55 (02) : 148 - 150
[6] Optimization of inductively coupled plasma deep etching of GaN and etching damage analysis
Qiu, Rongfu
Lu, Hai
Chen, Dunjun
Zhang, Rong
Zheng, Youdou
[J]. APPLIED SURFACE SCIENCE, 2011, 257 (07) : 2700 - 2706
[7] Experimental investigation of inductively coupled plasma etching on cemented carbides
Lian, Yunsong
Mu, Chenliang
Xie, Chaoping
Yao, Bin
[J]. VACUUM, 2019, 162 : 101 - 109
[8] Inductively Coupled Plasma Etching of Silicon Using Solid Iodine as an Etching Gas Source
Matsutani, Akihiro
Ohtsuki, Hideo
Koyama, Fumio
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 2011, 50 (06)
[9] Characteristics of silicon carbide etching using magnetized inductively coupled plasma
Lee, HY
Kim, DW
Sung, YJ
Yeom, GY
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005, 44 (03): : 1445 - 1449
[10] Proximity-controlled silicon carbide etching in inductively coupled plasma
Kim, B
Kim, S
Ann, SC
Lee, BT
[J]. THIN SOLID FILMS, 2003, 434 (1-2) : 276 - 282

← 1 2 3 4 5 →