Critical current density improvement of RHQT Nb3Al superconducting wires by incorporating magnetic Dy2O3 nanoparticles as additional flux pinning centers

被引:0
|
作者
Yang, Changkun [1 ]
Yu, Zhou [1 ]
Tang, Xuan [1 ]
Gu, Xiaojiao [1 ]
Guo, Yiming [1 ]
Wang, Wentao [1 ]
Zhao, Yong [1 ,2 ,3 ]
机构
[1] Southwest Jiaotong Univ, Sch Phys Sci & Technol, Key Lab Magnet Levitat & Maglev Trains, Minist Educ, Chengdu 610031, Peoples R China
[2] Fujian Normal Univ, Coll Phys & Energy, Fuzhou 350117, Peoples R China
[3] Fujian Normal Univ, Fujian Prov Collaborat Innovat Ctr Adv High Field, Fuzhou 350117, Peoples R China
关键词
Nb3Al; Stacking faults; Additional pinning centers; Jc improvement; FIELD; TRANSFORMATION; MICROSTRUCTURE; CONDUCTORS; PERFORMANCE;
D O I
10.1016/j.matchar.2024.114416
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this paper, we prepared magnetic Dy2O3 nanoparticles (n-Dy2O3) doped Nb3Al superconducting wires by rapid heating, quenching and transformation (RHQT) method, and investigated the micro-defects, superconducting properties and flux pinning mechanisms. TEM results showed high-density stacking faults (SF) with spacing of 5-25 nm located in Nb3Al (210) crystal planes, which is due to the absence of Nb atoms on the {100} crystal planes. Additionally, many intra-granular and inter-granular Dy2O3 nanoparticles with size of 4-40 nm were also observed in the Nb3Al superconducting phase. Jc was promoted in the doped samples, obtaining the best Jc of 1.95 x 105 A/cm2@ 4.2 K, 12 T in 1 at.% n-Dy2O3 doped Nb3Al wire, which was nearly 70 % higher than pristine Nb3Al wire. By doping n-Dy2O3, the fP(Fp/Fp,max)-h(B/Birr) peaks shift to larger h value (higher field). The flux pinning mechanism by fitting fP-h curves showed dominant surface pinning combined with point pinning, corresponding to the crystal defect of stacking faults and nanoparticles, respectively. The pinning mechanism verified that the nanoparticles acted as additional pinning centers to significantly elevate the Jc performance.
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页数:12
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