Epitaxial growth of β-SiC on ion-beam synthesized β-SiC: Structural characterization

被引：0

作者：

Romano-Rodriguez, A. ^{[1
]}

Pérez-Rodríguez, A. ^{[1
]}

Serre, C. ^{[1
]}

Morante, J.R. ^{[1
]}

Esteve, J. ^{[2
]}

Acero, M.C. ^{[2
]}

Kögler, R. ^{[3
]}

Skorupa, W. ^{[3
]}

Östling, M. ^{[4
]}

Nordell, N. ^{[5
]}

Karlsson, S. ^{[5
]}

Van Landuyt, J. ^{[6
]}

机构：

[1] EME, University of Barcelona, Assocaited Unit to CNIM-CSIC, c/Martí i Franquès 1, ES-08028 Barcelona, Spain

[2] CNM-CSIC, Campus UAB, ES-08193 Bellaterra, Spain

[3] Forschungszentrum Rossendorf, PO Box 510119, DE-01314 Dresden, Germany

[4] KTH, Electrum 229, SE-16440 Kista, Sweden

[5] IMC Indust. Microelectronics Center, Electrum 233, PO Box 1084, SE-16440 Kista, Sweden

[6] EMAT-RUCA, University of Antwerpen, Groenenborgerlaan 171, BE-2020 Antwerpen, Belgium

来源：

Materials Science Forum | 2000年 / 338卷

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