Epitaxial growth of β-SiC on ion-beam synthesized β-SiC: Structural characterization

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作者：
Romano-Rodriguez, A. [1 ]
Pérez-Rodríguez, A. [1 ]
Serre, C. [1 ]
Morante, J.R. [1 ]
Esteve, J. [2 ]
Acero, M.C. [2 ]
Kögler, R. [3 ]
Skorupa, W. [3 ]
Östling, M. [4 ]
Nordell, N. [5 ]
Karlsson, S. [5 ]
Van Landuyt, J. [6 ]
机构：
[1] EME, University of Barcelona, Assocaited Unit to CNIM-CSIC, c/Martí i Franquès 1, ES-08028 Barcelona, Spain
[2] CNM-CSIC, Campus UAB, ES-08193 Bellaterra, Spain
[3] Forschungszentrum Rossendorf, PO Box 510119, DE-01314 Dresden, Germany
[4] KTH, Electrum 229, SE-16440 Kista, Sweden
[5] IMC Indust. Microelectronics Center, Electrum 233, PO Box 1084, SE-16440 Kista, Sweden
[6] EMAT-RUCA, University of Antwerpen, Groenenborgerlaan 171, BE-2020 Antwerpen, Belgium
来源：
Materials Science Forum | 2000年 / 338卷
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