Surface potential model for amorphous InGaZnO thin-film transistors with independent symmetric double-gate

被引：0
|
作者：
He Y. [1 ]
Deng L. [1 ,2 ]
Zhen L. [1 ]
Qin T. [1 ]
Liao C. [1 ]
Luo H. [1 ,2 ]
Huang S. [1 ]
机构：
[1] School of Physics and Electronics, Central South University, Changsha
[2] Engineering Technology Research Center in Novel Chip Inductance and Advanced Manufacturing Equipment of Hunan Province, Huaihua
来源：
Deng, Lianwen (denglw@csu.edu.cn) | 1600年 / Central South University of Technology卷 / 51期
关键词：
Analytical model; Independent double-gate TFTs(thin film transistors); InGaZnO; Surface potential;
D O I：
10.11817/j.issn.1672-7207.2020.09.013
中图分类号：
学科分类号：
摘要：
An analytical surface potential model for the independent symmetric double-gate InGaZnO TFTs(thin film transistors) was presented.The Poisson equation was solved according to the different carrier density distributions in the subthreshold and conduction region. In the subthreshold region, the concept of equivalent flat band voltage was introduced, and in the conduction region, the approximated Lambert W function was applied to develop the analytical surface potential model for the amorphous InGaZnO thin-film transistors with independent symmetric double-gate. Furthermore, the effects of the different oxide thickness, the active layer thickness and the density of defect states were discussed. The results show that, in the subthreshold region, the surface potential increases approximately linearly with the increase of the bottom grid voltage, the surface potential shifts during the top-gate voltage modulation. In the conduction region, the surface potential has few correlation with the top-gate voltage. The present potential model shows excellent agreement with the simulation values. In the case of different densities of state distribution, the relative error of the calculation model and the TCAD analysis value is less than 10%. The result is helpful to understand the conduction mechanism of the InGaZnO TFTs, and is useful for the InGaZnO TFT device simulation and the related integrated circuit design. © 2020, Central South University Press. All right reserved.
引用
收藏
页码：2480 / 2488
页数：8
相关论文
共 29 条
  • [11] RIZZOLO S, GOIFFON V, ESTRIBEAU M, Et al., Influence of pixel design on charge transfer performances in CMOS image sensors, IEEE Transactions on Electron Devices, 65, 3, pp. 1048-1055, (2018)
  • [12] CAPOCCIA R, BOUKHAYMA A, JAZAERI F, Et al., Compact modeling of charge transfer in pinned photodiodes for CMOS image sensors, IEEE Transactions on Electron Devices, 66, 1, pp. 160-168, (2019)
  • [13] BIN WAN ZAIDI W M H, COSTA J, POURYAZDAN A, Et al., Flexible IGZO TFT SPICE model and design of active strain-compensation circuits for bendable active matrix arrays, IEEE Electron Device Letters, 39, 9, pp. 1314-1317, (2018)
  • [14] WANG Cuicui, HU Zhijin, HE Xin, Et al., One gate diode-connected dual-gate a-IGZO TFT driven pixel circuit for active matrix organic light-emitting diode displays, IEEE Transactions on Electron Devices, 63, 9, pp. 3800-3803, (2016)
  • [15] JEON C H, UM J G, MATIVENGA M, Et al., Fast threshold voltage compensation AMOLED pixel circuit using secondary gate effect of dual gate a-IGZO TFTs, IEEE Electron Device Letters, 37, 11, pp. 1450-1453, (2016)
  • [16] BILLAH M M, HAN J U, HASAN M M, Et al., Reduced mechanical strain in bendable a-IGZO TFTs under dual-gate driving, IEEE Electron Device Letters, 39, 6, pp. 835-838, (2018)
  • [17] TAUR Y., An analytical solution to a double-gate MOSFET with undoped body, IEEE Electron Device Letters, 21, 5, pp. 245-247, (2000)
  • [18] SAHOO A, THAKUR P K, MAHAPATRA S., A computationally efficient generalized Poisson solution for independent double-gate transistors, IEEE Transactions on Electron Devices, 57, 3, pp. 632-636, (2010)
  • [19] HUANG Junkai, DENG Wanling, ZHENG Xueren, Et al., A compact model for undoped symmetric double-gate polysilicon thin-film transistors, IEEE Transactions on Electron Devices, 57, 10, pp. 2607-2615, (2010)
  • [20] KAMIYA T, NOMURA K, HOSONO H., Origins of high mobility and low operation voltage of amorphous oxide TFTs: electronic structure, electron transport, defects and doping, Journal of Display Technology, 5, 7, pp. 273-288, (2009)
123