Surface potential model for amorphous InGaZnO thin-film transistors with independent symmetric double-gate

被引：0

作者：

He Y. ^{[1
]}

Deng L. ^{[1
,2
]}

Zhen L. ^{[1
]}

Qin T. ^{[1
]}

Liao C. ^{[1
]}

Luo H. ^{[1
,2
]}

Huang S. ^{[1
]}

机构：

[1] School of Physics and Electronics, Central South University, Changsha

[2] Engineering Technology Research Center in Novel Chip Inductance and Advanced Manufacturing Equipment of Hunan Province, Huaihua

来源：

Deng, Lianwen (denglw@csu.edu.cn) | 1600年 / Central South University of Technology卷 / 51期

关键词：

Analytical model; Independent double-gate TFTs(thin film transistors); InGaZnO; Surface potential;

D O I：

10.11817/j.issn.1672-7207.2020.09.013

中图分类号：

学科分类号：

摘要：

An analytical surface potential model for the independent symmetric double-gate InGaZnO TFTs(thin film transistors) was presented.The Poisson equation was solved according to the different carrier density distributions in the subthreshold and conduction region. In the subthreshold region, the concept of equivalent flat band voltage was introduced, and in the conduction region, the approximated Lambert W function was applied to develop the analytical surface potential model for the amorphous InGaZnO thin-film transistors with independent symmetric double-gate. Furthermore, the effects of the different oxide thickness, the active layer thickness and the density of defect states were discussed. The results show that, in the subthreshold region, the surface potential increases approximately linearly with the increase of the bottom grid voltage, the surface potential shifts during the top-gate voltage modulation. In the conduction region, the surface potential has few correlation with the top-gate voltage. The present potential model shows excellent agreement with the simulation values. In the case of different densities of state distribution, the relative error of the calculation model and the TCAD analysis value is less than 10%. The result is helpful to understand the conduction mechanism of the InGaZnO TFTs, and is useful for the InGaZnO TFT device simulation and the related integrated circuit design. © 2020, Central South University Press. All right reserved.

引用

页码：2480 / 2488

页数：8

共 29 条

[1] ZHAO Jiaqing, YU Pengfei, QIU Shi, Et al., Universal compact model for thin-film transistors and circuit simulation for low-cost flexible large area electronics, IEEE Transactions on Electron Devices, 64, 5, pp. 2030-2037, (2017)
[2] LI Yunpeng, YANG Jin, WANG Yiming, Et al., Complementary integrated circuits based on p-type SnO and n-type IGZO thin-film transistors, IEEE Electron Device Letters, 39, 2, pp. 208-211, (2018)
[3] FENG Guangdi, ZHAO Yuhang, JIANG Jie, Lightweight flexible indium-free oxide TFTs with AND logic function employing chitosan biopolymer as self-supporting layer, Solid-State Electronics, 153, pp. 16-22, (2019)
[4] HU Wennan, JIANG Jie, XIE Dingdong, Et al., Transient security transistors self-supported on biodegradable natural-polymer membranes for brain-inspired neuromorphic applications, Nanoscale, 10, 31, pp. 14893-14901, (2018)
[5] YU Fei, MA Xiaoyu, DENG Wanling, Et al., A surface-potential-based drain current compact model for a-InGaZnO thin-film transistors in Non-Degenerate conduction regime, Solid-State Electronics, 137, pp. 38-43, (2017)
[6] CAI Minxi, YAO Ruohe, A threshold voltage definition for modeling asymmetric dual-gate amorphous InGaZnO thin-film transistors with parameter extraction technique, Journal of Applied Physics, 125, 8, (2019)
[7] ZONG Zhiwei, LI Ling, JIANG Jin, Et al., A new surface potential-based compact model for a-IGZO TFTs in RFID applications, 2014 IEEE International Electron Devices Meeting, pp. 3551-3554, (2014)
[8] QIN Ting, LIAO Congwei, HUANG Shengxiang, Et al., Analytical drain current model for symmetric dual-gate amorphous indium gallium zinc oxide thin-film transistors, Japanese Journal of Applied Physics, 57, 1, (2018)
[9] DENG Xiaoqqing, DENG Lianwen, HE Yini, Et al., Leakage current model of InGaZnO thin film transistor, Acta Physica Sinica, 68, 5, pp. 219-225, (2019)
[10] JEONG H, KONG C S, CHANG S W, Et al., Temperature sensor made of amorphous indium-gallium-zinc oxide TFTs, IEEE Electron Device Letters, 34, 12, pp. 1569-1571, (2013)

← 1 2 3 →