(101¯0)- and (112¯0)-surfaces in 2H-, 4H- and 6H-SiC

被引:0
|
作者
Rauls, E. [1 ]
Hajnal, Z. [1 ,2 ]
Deák, P. [3 ]
Frauenheim, Th. [1 ]
机构
[1] Fachbereich Physik, Theoretische Physik, Universität-GH Paderborn, Warburgstr. 100, DE-33095 Paderborn, Germany
[2] MTA Res. Inst. Tech. Phys. Mat. Sci., PO Box 49, HU-1525 Budapest, Hungary
[3] Dept. of Atomic Physics, Technical University of Budapest, Budafoki út 8, HU-1111 Budapest, Hungary
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [1] (10(1)over-bar-0)- and (11(2)over-bar-0)-surfaces in 2H-, 4H- and 6H-SiC
    Rauls, E
    Hajnal, Z
    Deák, P
    Frauenheim, T
    SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, 338-3 : 365 - 368
  • [2] Silicate monolayers on the hexagonal surfaces of 4H- and 6H-SiC
    Bernhardt, J.
    Schardt, J.
    Starke, U.
    Heinz, K.
    Materials Science Forum, 2000, 338
  • [3] Simulations of submicron MOSFETs in 2H-, 4H-and 6H-SiC
    Dubaric, E
    Bertilsson, K
    Nilsson, HE
    PHYSICA SCRIPTA, 2002, T101 : 14 - 17
  • [4] Growth of AlN (112¯0) on 6H-SiC (112¯0) by molecular-beam epitaxy
    Onojima, Norio
    Suda, Jun
    Matsunami, Hiroyuki
    Japanese Journal of Applied Physics, Part 2: Letters, 2002, 41 (12 A):
  • [5] Shallow acceptor levels in 4H- and 6H-SiC
    S. R. Smith
    A. O. Evwaraye
    W. C. Mitchel
    M. A. Capano
    Journal of Electronic Materials, 1999, 28 : 190 - 195
  • [6] Shallow acceptor levels in 4H- and 6H-SiC
    Smith, SR
    Evwaraye, AO
    Mitchel, WC
    Capano, MA
    JOURNAL OF ELECTRONIC MATERIALS, 1999, 28 (03) : 190 - 195
  • [7] Dynamical properties of 3C-, 4H-, and 6H-SiC surfaces
    van Elsbergen, V
    Nienhaus, H
    Monch, W
    APPLIED SURFACE SCIENCE, 1998, 123 : 38 - 42
  • [8] Plasma-induced band edge shifts in 3C-, 2H-, 4H-, 6H-SiC and Si
    Persson, C
    Lindefelt, U
    Sernelius, BE
    SOLID-STATE ELECTRONICS, 2000, 44 (03) : 471 - 476
  • [9] Sublimation growth of 4H- and 6H-SiC boule crystals
    Heydemann, VD
    Schulze, N
    Barrett, DL
    Pensl, G
    DIAMOND AND RELATED MATERIALS, 1997, 6 (10) : 1262 - 1265
  • [10] Temperature dependence of sublimation growth of 6H-SiC on (112¯0) substrates
    Nishiguchi, Taro
    Masuda, Yasuichi
    Ohshima, Satoru
    Nishino, Shigehiro
    Materials Science Forum, 2002, 389-393 (01) : 119 - 122