Preparation of ZnO nanostructures with different morphologies by using hydrothermal method

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作者
Li, Chen [1 ]
Zhou, Ming [1 ]
Shen, Jian [1 ]
机构
[1] Center for Photon Manufacturing Science and Technology, Jiangsu University, Zhenjiang 202013, China
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关键词
Zinc oxide - Silicon wafers - Film preparation - Morphology - X ray diffraction - Scanning electron microscopy - Thin films - II-VI semiconductors - Zinc sulfide;
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摘要
The hydrothermal method was developed here to prepare ZnO nano-structure with different morphology on different seed layer. The substrates include silicon wafer, silicon wafer deposited with ZnO thin film, silicon wafer deposited with ITO thin film, etc. We investigated the influence of different seed layer on the morphology of ZnO nano-structure. We also prepared ZnO nano-structure on ZnO seed layer and ITO seed layer under different temperature to study the influence of temperature and seed layer on the length of nano-rod. Scanning electron microscopy (SEM) and X-ray diffraction (XRD) were developed to characterize the samples. The results showed that seed layer, reaction time, growth temperature and methanamide concentration had a great influence on the morphology of nano-structure. Nano-rod formed on ITO seed layer is shorter than prepared on the ZnO seed layer. From the SEM picture it also would be seen that the diameter and length of nano-rod increased as temperature goes high. X-ray diffraction peak at 34.6°C had a strong (002) wurtzite peaks, which showed a high degree of c-axis oriented nanorod arrays and good crystalline quality.
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页码:1327 / 1331
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