Terahertz wave generation device using multi-quantum well with transverse electric field

被引：0
|
作者：
机构：
[1] [1,Morohashi, Isao
[2] 1,Komori, Kazuhiro
[3] 2,Tsurumachi, Noriaki
[4] Shimura, Hisashi
[5] Hidaka, Takehiko
[6] Watanabe, Masanobu
来源：
Morohashi, I. (i-morohashi@aist.go.jp) | 1600年 / Japan Society of Applied Physics卷 / 44期
关键词：
Electric field effects - Electric potential - Electromagnetic waves - Ultrashort pulses;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
A multi-quantum-well (MQW) device with an electric field in the MQW plane was proposed as a high-power terahertz electromagnetic wave (THz wave) generator. High-power THz waves were generated by ultrashort optical pulse excitation of the MQW device. In the excitation wavelength dependence, the amplitude of the THz wave had a peak at around exciton absorption in the MQW, which implies that the THz wave is generated by the acceleration of photoexcited carriers in the MQW region. The amplitude was proportional to an applied voltage, and the power of the THz wave at an applied voltage of 500V was 60 times higher than that of the bulk In As reference. © 2005 The Japan Society of Applied Physics.
引用
收藏
相关论文
共 50 条
  • [11] Investigation on the performance of multi-quantum barriers in InGaN/GaN multi-quantum well light-emitting diodes
    Hu, Yeu-Jent
    Lee, Jiunn-Chyi
    Wu, Ya-Fen
    SECOND INTERNATIONAL CONFERENCE ON SMART MATERIALS AND NANOTECHNOLOGY IN ENGINEERING, 2009, 7493
  • [12] Ferroelectric tunnel junctions with multi-quantum well structures
    Ma, Zhijun
    Zhang, Tianjin
    Liang, Kun
    Qi, Yajun
    Wang, Duofa
    Wang, Jinzhao
    Jiang, Juan
    APPLIED PHYSICS LETTERS, 2014, 104 (22)
  • [13] Harnessing III-Nitride Built-In Field in Multi-Quantum Well LEDs
    Chlipala, Mikolaj
    Turski, Henryk
    ACS APPLIED MATERIALS & INTERFACES, 2024, 16 (18) : 24021 - 24028
  • [14] Localization effects in InGaAsN multi-quantum well structures
    Hoffmann, A
    Heitz, R
    Kaschner, A
    Lüttgert, T
    Born, H
    Egorov, AY
    Riechert, H
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2002, 93 (1-3): : 55 - 59
  • [15] Theory of InGaN multi-quantum well laser diodes
    Zegrya, GG
    IN-PLANE SEMICONDUCTOR LASERS: FROM ULTRAVIOLET TO MIDINFRARED, 1997, 3001 : 117 - 127
  • [16] Efficient Organic Multi-quantum Well Electroluminescent Devices Using Aluminum as Cathodes
    XIE Zhi-yuan 1
    2.Jilin Architectur
    Semiconductor Photonics and Technology, 1999, (02) : 18 - 21+31
  • [17] Thermal effect of multi-quantum barriers within InGaN/GaN multi-quantum well light-emitting diodes
    Lee, Jiunn-Chyi
    Wu, Ya-Fen
    THIN SOLID FILMS, 2010, 518 (24) : 7437 - 7440
  • [18] Study on multi-quantum barriers for use in quantum well solar cells
    Wu, LZ
    Tian, W
    Jiang, XT
    FIFTH INTERNATIONAL CONFERENCE ON THIN FILM PHYSICS AND APPLICATIONS, 2004, 5774 : 607 - 610
  • [19] Spectrum of an electron in a quantum well in high inclined magnetic field and high transverse electric field
    Telenkov, M. P.
    Mityagin, Yu. A.
    SEMICONDUCTORS, 2006, 40 (05) : 581 - 586
  • [20] Spectrum of an electron in a quantum well in high inclined magnetic field and high transverse electric field
    M. P. Telenkov
    Yu. A. Mityagin
    Semiconductors, 2006, 40 : 581 - 586
12345