Terahertz wave generation device using multi-quantum well with transverse electric field

被引：0
|
作者：
机构：
[1] [1,Morohashi, Isao
[2] 1,Komori, Kazuhiro
[3] 2,Tsurumachi, Noriaki
[4] Shimura, Hisashi
[5] Hidaka, Takehiko
[6] Watanabe, Masanobu
来源：
Morohashi, I. (i-morohashi@aist.go.jp) | 1600年 / Japan Society of Applied Physics卷 / 44期
关键词：
Electric field effects - Electric potential - Electromagnetic waves - Ultrashort pulses;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
A multi-quantum-well (MQW) device with an electric field in the MQW plane was proposed as a high-power terahertz electromagnetic wave (THz wave) generator. High-power THz waves were generated by ultrashort optical pulse excitation of the MQW device. In the excitation wavelength dependence, the amplitude of the THz wave had a peak at around exciton absorption in the MQW, which implies that the THz wave is generated by the acceleration of photoexcited carriers in the MQW region. The amplitude was proportional to an applied voltage, and the power of the THz wave at an applied voltage of 500V was 60 times higher than that of the bulk In As reference. © 2005 The Japan Society of Applied Physics.
引用
收藏
相关论文
共 50 条
  • [1] Terahertz wave generation device using multi-quantum well with transverse electric field
    Morohashi, I
    Komori, K
    Tsurumachi, N
    Shimura, H
    Hidaka, T
    Watanabe, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005, 44 (9A): : 6425 - 6428
  • [2] Terahertz wave generation from multi-quantum well with transverse electric field
    Morohashi, I
    Komori, K
    Shimura, H
    Hidaka, T
    Ikeda, H
    Tujikura, S
    Yamamoto, M
    Okamoto, Y
    ULTRAFAST PHENOMENA XIII, 2003, 71 : 256 - 258
  • [3] And control of electric field configurations along multi-quantum well structures
    Grave, I
    An, SW
    PURE AND APPLIED OPTICS, 1998, 7 (02): : 409 - 419
  • [4] Edge-Terminated AlGaN/GaN/AlGaN Multi-Quantum Well Impact Avalanche Transit Time Sources for Terahertz Wave Generation
    Ghosh, Monisha
    Deb, Shilpi Bhattacharya
    Acharyya, Aritra
    Biswas, Arindam
    Inokawa, Hiroshi
    Satoh, Hiroaki
    Banerjee, Amit
    Seteikin, Alexey Y.
    Samusev, Ilia G.
    NANOMATERIALS, 2024, 14 (10)
  • [5] Broadband bias-tunable terahertz photodetector using asymmetric GaAs/AlGaAs step multi-quantum well
    Wang, H. X.
    Fu, Z. L.
    Shao, D. X.
    Zhang, Z. Z.
    Wang, C.
    Tan, Z. Y.
    Guo, X. G.
    Cao, J. C.
    APPLIED PHYSICS LETTERS, 2018, 113 (17)
  • [6] Gain spectroscopy of continuous wave InGaN multi-quantum well laser diodes
    Deguchi, T
    Azuhata, T
    Sota, T
    Chichibu, S
    Arita, M
    Nakanishi, H
    Nakamura, S
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1998, 13 (01) : 97 - 101
  • [7] Multi-Stage-Multi-Iterative Optimization Algorithm for Design Optimization of Multi-Quantum Well Terahertz IMPATT Sources
    Chakraborty, Sudip
    Acharyya, Aritra
    Biswas, Arindam
    Kundu, Anjan Kumar
    PROCEEDINGS OF 2ND INTERNATIONAL CONFERENCE ON VLSI DEVICE, CIRCUIT AND SYSTEM (IEEE VLSI DCS 2020), 2020, : 129 - 133
  • [8] LUMINESCENCE OF SEMICONDUCTOR MULTI-QUANTUM WELL STRUCTURES
    KOPEV, PS
    KOCHERESHKO, VP
    MELTSER, BY
    URALTSEV, IN
    YAKOVLEV, DR
    IZVESTIYA AKADEMII NAUK SSSR SERIYA FIZICHESKAYA, 1988, 52 (04): : 753 - 757
  • [9] Analysis of multi-quantum well electroabsorption modulators
    Piprek, J
    Chiu, YJ
    Bowers, JE
    PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES X, 2002, 4646 : 609 - 617
  • [10] Terahertz wave from coherent LO phonon in a GaAs/AlAs multiple quantum well under an electric field
    Mizoguchi, K.
    Kanzawa, Y.
    Nakayama, M.
    Saito, S.
    Sakai, K.
    ULTRAFAST PHENOMENA XVI, 2009, 92 : 681 - +
12345