Microstructure evolution during silicon oxidation at room temperature under composite ion beam irradiation

被引：0
|
作者：
Prikhodko, K.E. [1 ,2 ]
Gurovich, B.A. [1 ]
Komarov, D.A. [1 ]
Goncharova, D.A. [1 ]
Kutuzov, L.V. [1 ]
机构：
[1] National Research Centre, Kurchatov Institute, Kurchatov sq.1, Moscow,123182, Russia
[2] National Research Nuclear University (MEPhI), Kashirskoe sh., 31, 115409, Russia
来源：
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms | 2014年 / 326卷
关键词：
Ions;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
In this work, we studied the silicon microstructure evolution during its oxidation under composite beam ion irradiation at room temperature. It was found that when the composite ion beam was formed by hydrogen and dry oxygen mixture at low doses (∼1018cm-2), a porous silicon layer was formed. During irradiation, the pore size gradually reduced and at a dose of ∼1020cm-2pores disappear completely, and an uniform layer of silicon oxide was formed. If residual gases and hydrogen are used to generate a composite ion beam, the formation of porous silicon is not found. The final thickness of irradiation-induced silicon oxide corresponded to the projected range of protons at a given energy in both cases. © 2014 Elsevier B.V. All rights reserved.
引用
收藏
页码：273 / 277
相关论文
共 50 条
  • [1] Microstructure evolution during silicon oxidation at room temperature under composite ion beam irradiation
    Prikhodko, K. E.
    Gurovich, B. A.
    Komarov, D. A.
    Goncharova, D. A.
    Kutuzov, L. V.
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2014, 326 : 273 - 277
  • [2] The microstructure evolution in a SiCf/SiC composite under triple ion beam irradiation
    Ye, Chao
    Xue, Jiaxiang
    Liu, Tong
    Shu, Rui
    Yan, Yan
    Liao, Yehong
    Ren, Qisen
    Ran, Guang
    Sun, Kai
    Jiang, Li
    Xiu, Pengyuan
    Wang, Lumin
    CERAMICS INTERNATIONAL, 2020, 46 (07) : 9901 - 9906
  • [3] Microstructural evolution of silicon carbide fiber under argon ion irradiation at room temperature
    Liu, Chuanxin
    Sun, Wenwu
    Chen, Bo
    Lei, Qiantao
    Zhou, Wei
    He, Zhoutong
    CERAMICS INTERNATIONAL, 2024, 50 (06) : 9214 - 9222
  • [4] Study of the topography of silicon surface evolution under irradiation by a gallium ion beam
    Smirnova, M. A.
    Bachurin, V. I.
    Lebedev, M. E.
    Mazaletsky, L. A.
    Pukhov, D. E.
    Churilov, A. B.
    Rudy, A. S.
    VACUUM, 2022, 203
  • [5] Characterization of microstructure in hydrogen ion irradiated vanadium at room temperature and the microstructural evolution during post-irradiation annealing
    Gao, Jin
    Cui, Lijuan
    Wan, Farong
    MATERIALS CHARACTERIZATION, 2016, 111 : 1 - 7
  • [6] ROOM-TEMPERATURE OXIDATION OF ION BOMBARDED SILICON
    PONPON, JP
    SURFACE SCIENCE, 1985, 162 (1-3) : 687 - 694
  • [7] Enhanced room temperature oxidation in silicon and porous silicon under 10 keV x-ray irradiation
    Ryckman, Judson D.
    Reed, Robert A.
    Weller, Robert A.
    Fleetwood, D. M.
    Weiss, S. M.
    JOURNAL OF APPLIED PHYSICS, 2010, 108 (11)
  • [8] Microstructure and defect evolution of nuclear graphite under temperature-dependent ion irradiation
    Zhao, Yumeng
    Lv, Shasha
    Gao, Jie
    Zhou, Zhou
    Yeli, Guma
    Li, Zhengcao
    JOURNAL OF NUCLEAR MATERIALS, 2023, 577
  • [9] ROOM TEMPERATURE OXIDATION OF SILICON DURING AND AFTER ETCHING
    RITTER, JC
    ROBINSON, MN
    FARADAY, BJ
    HOOVER, JI
    JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1965, 26 (04) : 721 - +
  • [10] Controlled oxidation of mono-Si and Si3N4 under irradiation of composite ion beams at room temperature
    Gurovich, B. A.
    Prikhodko, K. E.
    Kuleshova, E. A.
    Komarov, D. A.
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2013, 307 : 207 - 209
12345