Multi-physics modeling of phase change memory operations in Ge-rich Ge 2 Sb 2 Te 5 alloys

被引：0
|
作者：
Miquel, Robin [1 ,2 ,3 ]
Cabout, Thomas [1 ]
Cueto, Olga [2 ]
Sklénard, Benoit [2 ]
Plapp, Mathis [3 ]
机构：
[1] STMicroelectronics, 850 rue Jean Monnet, Crolles,38926, France
[2] Université Grenoble Alpes, CEA, Leti, Grenoble,F-38000, France
[3] Laboratoire de Physique de la Matière Condensée, Ecole Polytechnique, CNRS, Institut Polytechnique de Paris, Palaiseau,91128, France
来源：
Journal of Applied Physics | 2024年 / 136卷 / 14期
关键词：
46;
D O I：
10.1063/5.0222379
中图分类号：
学科分类号：
摘要：
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