A Recent Review on Silicon Carbide Power Devices Technologies

被引：0
|
作者：
Sheng K. [1 ]
Ren N. [1 ]
Xu H. [1 ]
机构：
[1] College of Electrical Engineering, Zhejiang University, Hangzhou, 310027, Zhejiang Province
来源：
Zhongguo Dianji Gongcheng Xuebao/Proceedings of the Chinese Society of Electrical Engineering | 2020年 / 40卷 / 06期
基金：
国家重点研发计划; 中国国家自然科学基金;
关键词：
Diodes; Gate turn-off thyristor (GTO); Insulator gate bipolar transistor (IGBT); Junction field effect transistor (JFET); Metal-oxide- semiconductor field effect transistor (MOSFET); Power device; Silicon carbide (SiC);
D O I：
10.13334/j.0258-8013.pcsee.191728
中图分类号：
学科分类号：
摘要：
Silicon carbide power devices has the advantage of blocking higher voltage, working at higher temperature and having lower conduction resistance. For more than 20 years, it has attracted extensive attention from many domestic and oversea research institutions and commercial companies. Firstly, this paper classified different silicon carbide devices and described their developments in recent years. Diodes, junction field effect transistor (JFET), metal-oxide- semiconductor field effect transistor (MOSFET), insulator gate bipolar transistor (IGBT) and gate turn-off thyristor (GTO) devices were discussed and their performances were compared. Finally, the development of silicon carbide devices was summarized and the trend of development was given. © 2020 Chin. Soc. for Elec. Eng.
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页码：1741 / 1752
页数：11
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