Sputtering deposition of VO2 film using plasma emission monitor as reactive gas flow rate feedback control

被引：0
|
作者：
Wang, Xiao [1 ]
Yan, Lu [1 ]
Li, Ying [1 ]
Cao, Yun-Zhen [1 ]
机构：
[1] Key Laboratory of Inorganic Coating Materials, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai,200050, China
来源：
Wuji Cailiao Xuebao/Journal of Inorganic Materials | 2015年 / 30卷 / 11期
关键词：
Light transmission - Feedback control - Reactive sputtering - Vanadium dioxide - Magnetron sputtering - Flow of gases;
D O I：
10.15541/jim20150302
中图分类号：
学科分类号：
摘要：
Monoclinic VO2 film was deposited on quartz substrate by reactive sputtering using the plasma emission monitor (PEM) system as reactive gas flow rate feedback control. Relationship between oxygen flow rate and plasma emission intensity was studied. It was found that single-phase VO2(M) could be obtained steadily at specific relative emission intensity (REI), which were determined as 0.6-0.65, 0.65 and 0.6 for total deposition pressure of 0.8 Pa, 0.5 Pa and 0.2 Pa, respectively. XRD measurement indicated that the deposited VO2 films were strongly oriented of (011) and the XPS measurements verified stoichiometry of the films as VO2.02. Optical transmission measurement of VO2 film exhibited an abrupt change of transmittance from 81% to 16% as VO2 film switched from semiconductor state to metallic state, at transition temperature of 66℃. © 2015, Science Press. All right reserved.
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页码：1228 / 1232
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