Substrate temperature-dependant properties of HMGZO thin films deposited by DC magnetron sputtering

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作者
Liu, Jie-Ming [1 ]
Chen, Xin-Liang [1 ]
Tian, Cong-Sheng [1 ]
Liang, Jun-Hui [1 ]
Zhang, De-Kun [1 ]
Zhao, Ying [1 ]
Zhang, Xiao-Dan [1 ]
机构
[1] Tianjin Key Laboratory on Photoelectronic Thin Film Devices and Technology, Institute of Photo-electronic Thin Film Devices and Technology, Nankai University, Tianjin , China
关键词
II-VI semiconductors - Thin film solar cells - Zinc oxide - Semiconductor doping - Gallium - Substrates - Zinc sulfide - Magnesium - Magnetron sputtering - Thin films;
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摘要
To meet the demands of high efficient silicon thin film solar cells, hydrogenated Mg and Ga co-doped ZnO (HMGZO) films have been deposited by pulsed DC magnetron sputtering at different substrate temperatures. The structural, morphological, optical, and electrical properties of HMGZO films are investigated in detail. Experimental results show that all the HMGZO films present a polycrystalline hexagonal wurtzite phase with a c-axis preferred orientation. With increasing the substrate temperature, the novel cone-like surface morphology of HMGZO films becomes denser, and the content of Mg atoms in HMGZO films increases. The optical transmittances of all the HMGZO thin films are higher than 80% in the visible wavelength range from 380 nm to 800 nm. The incorporation of Mg atoms and Burstein-Moss (BM) band-filling determined by carrier concentrations together contribute to the band-gap (Eg) broadening phenomenon, and the Eg of the HMGZO films reaches 3.75 eV. The HMGZO film deposited at 280 exhibits a low sheet resistance of 4.91 Ω, low resistivity of 7.63×10-4 Ω·cm and high ΦTC value of 0.022 Ω-1.
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页码:2114 / 2122
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