Analytic modeling for drain-induced barrier lowering phenomenon of the InGaP/InGaAs/GaAs pseudomorphic doped-channel field-effect transistor

被引：0
|
作者：
Lee, Ching-Sung [2 ]
Hsu, Wei-Chou [1 ]
Wu, Chang-Luen [3 ]
机构：
[1] Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, 1, University Road, Tainan, Taiwan
[2] Department of Electronic Engineering, Chien-Kuo Institute of Technology, Chanhwa, Taiwan
[3] Transcom, Inc., Tainan Science-Based Industrial Park, 90, Dasoong 7 Road, Shanhua, Tainan County, Taiwan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2002年 / 41卷 / 10期
关键词：
Drain-induced barrier lowering - Newton method - Pseudomorphic doped-channel field effect transistor - Short-channel effect;
D O I：
10.1143/jjap.41.5919
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：5919 / 5923
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