Growing and photosensitivity of epitaxial layer of silicon doped with carbon

被引：0
|
作者：
Saidov, A.S.
Usmonov, Sh.N.
Saidov, M.S.
Saparov, D.
机构：
来源：
Geliotekhnika | 2005年 / 02期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
No abstract available
引用
收藏
页码：82 / 85
相关论文
共 50 条
  • [21] Atomic Layer Deposition for Epitaxial Oxides on Silicon
    Willis, B. G.
    Zhang, C. B.
    ATOMIC LAYER DEPOSITION APPLICATIONS 6, 2010, 33 (02): : 51 - 59
  • [22] OXYGEN DISTRIBUTION IN A THIN EPITAXIAL SILICON LAYER
    WIJARANAKULA, W
    JOURNAL OF APPLIED PHYSICS, 1993, 73 (02) : 1004 - 1006
  • [23] INCORPORATION OF PHOSPHORUS IN SILICON EPITAXIAL LAYER GROWTH
    BLOEM, J
    GILING, LJ
    GRAEF, MWM
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (10) : 1354 - 1357
  • [24] RAMAN-SCATTERING IN AN EPITAXIAL LAYER OF SILICON
    RAHN, LA
    HATHAWAY, CE
    JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1973, 63 (04) : 483 - 483
  • [25] Oxygen distribution in a thin epitaxial silicon layer
    1600, (73):
  • [26] TEM and XRD characterizations of epitaxial silicon layer fabricated on double layer porous silicon
    Gouder, S.
    Tebessi, L.
    Mahamdi, R.
    Escoubas, S.
    Favre, L.
    Aouassa, M.
    Ronda, A.
    Berbezier, I.
    DIELECTRIC MATERIALS AND APPLICATIONS, ISYDMA '2016, 2016, 1 : 249 - 252
  • [27] PHOSPHORUS-DOPED EPITAXIAL LAYER OF GERMANIUM
    SMORODINA, TA
    DANILCHUK, LN
    STEPANOVA, AN
    INORGANIC MATERIALS, 1985, 21 (02) : 145 - 148
  • [28] Improvement of alignment tolerance against contact hole etching by growing of underlying silicon-selective epitaxial layer
    Nakahata, T
    Sugihara, K
    Furukawa, T
    Nishioka, Y
    Maruno, S
    Abe, Y
    Tokuda, Y
    Satoh, S
    MICROELECTRONIC ENGINEERING, 2001, 56 (3-4) : 281 - 287
  • [29] PHOTOSENSITIVITY OF MAGNETIC ANISOTROPY IN SILICON-DOPED YTTRIUM IRON GARNET
    TEALE, RW
    WEATHERLEY, DI
    SHARP, BT
    PHYSICS LETTERS A, 1969, A 30 (03) : 155 - +
  • [30] PHOTOSENSITIVITY AND CONDUCTIVITY OF AMORPHOUS-SILICON DOPED WITH ISOVALENT GERMANIUM IMPURITIES
    KHOKHLOV, AF
    ERSHOV, AV
    MASHIN, AI
    MORDVINOVA, YA
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1987, 21 (10): : 1156 - 1157
12345