Design and process for self-aligned InP/InGaAs SHBT structure

被引：0
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作者：
机构：
[1] Li, Xianjie
[2] Cai, Daomin
[3] Zhao, Yonglin
[4] Wang, Quanshu
[5] Zhou, Zhou
[6] Zeng, Qingming
来源：
Li, X. | 2005年 / Science Press卷 / 26期
关键词：
Alignment - Anisotropy - Etching - Semiconducting indium compounds - Structural design - Structure (composition);
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摘要：
A traditional base-emitter contact self-aligned structure and an improved one are designed and processed for InP/InGaAs single heterojunction bipolar transistor (SHBT) based on wet chemical anisotropy etching experiment of InP. The effect of shorting the gap between the base contact and the emitter mesa for the two structures is compared, which provides the effective method for high frequency devices.
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