Effects of growth interruption during growth of InAs wetting layer on formation of InAs quantum dots

被引：0
|
作者：
机构：
[1] Morishita, Yoshitaka
[2] Osada, Koh
[3] Hasegawa, Tomoaki
来源：
Morishita, Y. (morisita@cc.tuat.ac.jp) | 1600年 / Japan Society of Applied Physics卷 / 44期
关键词：
15;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [31] Growth of InAs quantum dot without introducing wetting layer by alternate deposition of InAs and GaAs with quasi-monolayer
    Kim, JS
    Koguchi, N
    Lee, DY
    Bae, IH
    Lee, JI
    Kim, GH
    Kang, SK
    Ban, SI
    Kim, JS
    Lee, SH
    Choi, HK
    Jeon, M
    Leem, JY
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2003, 42 : S476 - S479
  • [32] Phase separation growth of InGaAs cap layer on InAs/GaAs quantum dots
    Chen, SD
    Tsai, CY
    Lee, SC
    PROCEEDINGS OF THE 2002 2ND IEEE CONFERENCE ON NANOTECHNOLOGY, 2002, : 341 - 342
  • [33] Energy emission tuning of InAs/GaAs self-assembled quantum dots by growth interruption
    Patanè, A
    Polimeni, A
    Henini, M
    Eaves, L
    Main, PC
    Al-Khafaji, M
    Cullis, AG
    COMPOUND SEMICONDUCTORS 1998, 1999, (162): : 451 - 455
  • [34] Shape and growth of InAs quantum dots on GaAs(113)A
    Temko, Y
    Suzuki, T
    Jacobi, K
    APPLIED PHYSICS LETTERS, 2003, 82 (13) : 2142 - 2144
  • [35] Selective growth of InAs quantum dots on patterned GaAs
    Hsieh, TP
    Chiu, PC
    Liu, YC
    Yeh, NT
    Ho, WJ
    Chyi, JI
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2005, 23 (01): : 262 - 266
  • [36] The impact of growth parameters on the formation of InAs quantum dots on GaAS(100) by MOCVD
    Cederberg, JG
    Kaatz, FH
    Biefeld, RM
    JOURNAL OF CRYSTAL GROWTH, 2004, 261 (2-3) : 197 - 203
  • [37] Charged and neutral excitons in natural quantum dots in the InAs/GaAs wetting layer
    Babinski, Adam
    Potemski, M.
    Raymond, S.
    Wasilewski, Z. R.
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2008, 40 (06): : 2078 - 2080
  • [38] Growth temperature and InAs supply dependences of InAs quantum dots on InP (001) substrate
    Okawa, Tatsuya
    Yamauchi, Yusuke
    Yamamoto, Junya
    Yoshida, Junji
    Shimomura, Kazuhiko
    JOURNAL OF CRYSTAL GROWTH, 2007, 298 : 562 - 566
  • [39] RHEED, STM and PL studies of the direct formation of InAs/GaAs quantum dots during epitaxial growth
    Cirlin, GE
    Petrov, VN
    Dubrovskii, VG
    Golubok, AO
    Ledentsov, NN
    Bimberg, D
    ECASIA 97: 7TH EUROPEAN CONFERENCE ON APPLICATIONS OF SURFACE AND INTERFACE ANALYSIS, 1997, : 709 - 712
  • [40] Formation of InAs/GaAs quantum dots from a subcritical InAs wetting layer: A reflection high-energy electron diffraction and theoretical study
    Song, HZ
    Usuki, T
    Nakata, Y
    Yokoyama, N
    Sasakura, H
    Muto, S
    PHYSICAL REVIEW B, 2006, 73 (11):
12345