Determining the junction temperature of GaN-based blue LED with the double spectral parameters

被引:0
|
作者
Rao, Feng [1 ,2 ,3 ]
Guo, Jie [1 ]
Xu, Hao [1 ]
Xu, An-Cheng [1 ]
Zhu, Xi-Fang [1 ]
机构
[1] Colleague of Electrical and Optoelectronic Engineering, Changzhou Institute of Technology, Changzhou, China
[2] Changzhou Institute of Modern Optoelectronic Technology, Changzhou, China
[3] Changzhou Key Laboratory of Optoelectronic Materials and Devices, Changzhou, China
关键词
D O I
10.16136/j.joel.2015.11.0550
中图分类号
学科分类号
摘要
引用
下载
收藏
页码:2083 / 2088
相关论文
共 50 条
  • [21] Accurate determination of junction temperature in a GaN-based blue light-emitting diode using nonlinear voltage-temperature relation
    Onwukaeme, Chibuzo
    Choi, Won-Jin
    Ryu, Han-Youl
    OPTICAL AND QUANTUM ELECTRONICS, 2021, 53 (09)
  • [22] GaN-based tunnel junction in optical devices
    Takeuchi, T
    Hasnain, G
    Corzine, S
    Hueschen, M
    Schneider, RP
    Kocot, C
    Blomqvist, M
    Chang, YL
    Lefforge, D
    Krames, MR
    Cook, LW
    Stockman, SA
    Han, J
    Diagne, M
    He, Y
    Makarona, E
    Nurmikko, A
    PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES X, 2002, 4646 : 555 - 562
  • [23] Determination of junction temperature and thermal resistance in the GaN-based LEDs using direct temperature measurement
    Hwang, WJ
    Lee, TH
    Kim, L
    Shin, MW
    5TH INTERNATIONAL SYMPOSIUM ON BLUE LASER AND LIGHT EMITTING DIODES, PROCEEDINGS, 2004, : 2429 - 2432
  • [24] Measurement of junction temperature in GaN-based laser diodes using voltage-temperature characteristics
    Ryu, HY
    Ha, KH
    Chae, JH
    Nam, OH
    Park, YJ
    NOVEL IN-PLANE SEMICONDUCTOR LASERS IV, 2005, 5738 : 238 - 244
  • [25] GaN-based UV/blue electroluminescent devices deposited on Si at low temperature
    Aoki, Y
    Hama, M
    Koike, A
    Tomonari, M
    Honda, T
    Kawanishi, H
    5TH INTERNATIONAL SYMPOSIUM ON BLUE LASER AND LIGHT EMITTING DIODES, PROCEEDINGS, 2004, : 2409 - 2412
  • [26] The influence of the coating metals with various work function on the photoluminescence of a GaN-based blue LED wafer
    Fang, Wenqing
    Xiong, Chuanbin
    Zheng, Changda
    Wang, Li
    Jiang, Fengyi
    JOURNAL OF LUMINESCENCE, 2007, 126 (02) : 636 - 640
  • [27] Measurement of junction temperature in GaN-based laser diodes using voltage-temperature characteristics
    Ryu, HY
    Ha, KH
    Chae, JH
    Nam, OH
    Park, YJ
    APPLIED PHYSICS LETTERS, 2005, 87 (09)
  • [28] High Power GaN-Based Blue Lasers
    Hu Lei
    Zhang Liqun
    Liu Jianping
    Huang Siyi
    Ren Xiaoyu
    Tian Aiqin
    Zhou Wei
    Xiong Wei
    Li Deyao
    Mason, Ikeda
    Yang Hui
    CHINESE JOURNAL OF LASERS-ZHONGGUO JIGUANG, 2020, 47 (07):
  • [29] The state of SiC:GaN-based blue LEDs
    Edmond, J
    Kong, HS
    Leonard, M
    Bulman, G
    Negley, G
    SILICON CARBIDE AND RELATED MATERIALS 1995, 1996, 142 : 991 - 994
  • [30] GaN-based blue/green semiconductor laser
    Nakamura, S
    IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1997, 3 (02) : 435 - 442