Al+ implanted 4H-SiC p+-i-n diodes: Evidence for post-implantation-annealing dependent defect activation

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20141217488142
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(1) ABB Corporate Research, Segelhofstrasse 1K, 5405 Baden - Daettwil, Switzerland; (2) CNR-IMM of Bologna, via Gobetti 101, I-40129 Bologna, Italy | 1600年 / Cree Inc.; et al; Mitsubishi Electric Corporation; Research Institute for Applied Sciences; The Japan Society of Applied Physics; Tokyo Electron Limited卷 / Trans Tech Publications Ltd期
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