The transport phenomena during the growth of ZnTe crystal by the temperature gradient solution growth technique

被引:0
|
作者
Yin L. [1 ,2 ]
Jie W. [1 ,2 ]
Wang T. [1 ,2 ]
Zhou B. [1 ,2 ]
Yang F. [1 ,2 ]
机构
[1] State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi'an
[2] Key Laboratory of Radiation Detection Materials and Devices, Ministry of Industry and Information Technology
基金
中国国家自然科学基金;
关键词
A1. Computer simulation; A1. Mass transfer; A2. Growth from high temperature solutions; A2. Single crystal growth; B2. Semiconducting II-VI materials; B3. Terahertz devices;
D O I
10.1016/j.jcrysgro.2016.11.074
中图分类号
学科分类号
摘要
A numerical model is developed to simulate the temperature field, the thermosolutal convection, the solute segregation and the growth interface morphology during the growth of ZnTe crystal from Te rich solution by the temperature gradient solution growth (TGSG) technique. Effects of the temperature gradient on the transport phenomena, the growth interface morphology and the growth rate are examined. The influences of the latent heat and the thermal conductivity of ZnTe crystal on the transport phenomena and the growth interface are also discussed. We find that the mass transfer of ZnTe in the solution is very slow because of the low diffusion coefficient and the lack of mixing in the lower part of the solution. During the growth, dilute solution with high density and low growth temperature accumulates in the central region of the growth interface, making the growth interface change into two distinct parts. The inner part is very concave, while the outer part is relatively flat. Growth conditions in front of the two parts of the growth interface are different. The crystalline quality of the inner part of the ingot is predicted to be worse than that of the outer part. High temperature gradient can significantly increase the growth rate, and avoid the diffusion controlled growth to some extent. © 2017 Elsevier B.V.
引用
收藏
页码:16 / 24
页数:8
相关论文
共 50 条
  • [41] Crystal growth using low temperature gradient sublimation
    Karpinska, Jolanta
    Erxleben, Andrea
    McArdle, Patrick
    ACTA CRYSTALLOGRAPHICA A-FOUNDATION AND ADVANCES, 2011, 67 : C463 - C463
  • [42] PHENOMENA, ARISED DURING STOPPAGE OF CRYSTAL-GROWTH
    ROMANENK.VN
    KHEIFETS, VS
    KRISTALLOGRAFIYA, 1973, 18 (05): : 1057 - 1062
  • [43] Growth and Characterization of CdZnTe Bulk Crystals Grown by Temperature Gradient Solution Growth
    Sun, Xiaoxiang
    Min, Jiahua
    Liang, Xiaoyan
    Zhang, Tao
    Teng, Jiaqi
    Zhang, Jijun
    Wang, Linjun
    ADVANCES IN CHEMICAL, MATERIAL AND METALLURGICAL ENGINEERING, PTS 1-5, 2013, 634-638 : 2470 - 2474
  • [44] Numerical Study of Transport Phenomena During Bulk Single Crystal Growth under Microgravity Fields
    Takagi, Youhei
    Minakuchi, Hisashi
    Okano, Yasunori
    INTERNATIONAL JOURNAL OF MICROGRAVITY SCIENCE AND APPLICATION, 2013, 30 (01): : 2 - 10
  • [45] Effects of the Temperature Gradient Near the Crystal-Melt Interface in Top Seeded Solution Growth of SiC Crystal
    Ha, Minh-Tan
    Shin, Yun-Ji
    Lee, Myung-Hyun
    Kim, Cheol-Jin
    Jeong, Seong-Min
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2018, 215 (20):
  • [46] TRANSPORT CONTROL IN CRYSTAL-GROWTH FROM SOLUTION
    NIELSEN, AE
    CROATICA CHEMICA ACTA, 1980, 53 (02) : 255 - 279
  • [47] EPITAXIAL GROWTH OF ZNTE ON ZNSE BY VAPOR TRANSPORT
    TSUJIMOTO, Y
    FUKAI, M
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1967, 6 (08) : 1013 - +
  • [48] Growth and characterization of stilbene doped bibenzyl scintillator crystal by solution growth technique
    Durairaj, Narayanan
    Kalainathan, Sivaperuman
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2018, 29 (12) : 10480 - 10486
  • [49] Growth and characterization of stilbene doped bibenzyl scintillator crystal by solution growth technique
    Narayanan Durairaj
    Sivaperuman Kalainathan
    Journal of Materials Science: Materials in Electronics, 2018, 29 : 10480 - 10486
  • [50] CRYSTAL-GROWTH OF RUS2, RU BY CHEMICAL VAPOR TRANSPORT AND HIGH-TEMPERATURE SOLUTION GROWTH
    FIECHTER, S
    KUHNE, HM
    JOURNAL OF CRYSTAL GROWTH, 1987, 83 (04) : 517 - 522