Oxygen behavior in aluminum nitride

被引:0
|
作者
机构
[1] Kazan, M.
[2] Ruffl´, B.
[3] Zgheib, Ch.
[4] Masri, P.
来源
Kazan, M. | 1600年 / American Institute of Physics Inc.卷 / 98期
关键词
Aluminum nitride - Contamination - Light polarization - Polycrystalline materials;
D O I
暂无
中图分类号
学科分类号
摘要
The infrared lattice-vibration spectra of three polycrystalline samples of wurtzite AlN differing in their oxygen contamination have been studied by measuring the room-temperature reflectivity at near-normal incidence in the 400-3000 cm-1 frequency range using unpolarized light. A type of highly-contaminated-material reflectivity spectrum has been observed. Two-mode behavior has been observed at low oxygen concentration, one-mode behavior tends to be dominant when the oxygen concentration increases and only one-mode behavior has been observed at high oxygen concentration. Otherwise, a careful analysis of the data using the Kramers-Kronig technique and classical dispersion theory gives, in addition to the transverse and longitudinal mode frequencies, two in-band resonance modes attributed to oxygen point defects in AlN. Changes in the frequencies of these modes with oxygen concentration are interpreted as a transition in the oxygen accommodation defect as the concentration of oxygen increases. A model for the behavior of oxygen in AlN is proposed. © 2005 American Institute of Physics.
引用
收藏
相关论文
共 50 条
  • [21] Study on rheological behavior of slurry for aluminum nitride ceramics
    Yao, Yi-Jun
    Qiu, Tai
    Cailiao Gongcheng/Journal of Materials Engineering, 2006, (09): : 10 - 13
  • [22] Fracture behavior of high thermal conductive aluminum nitride
    Yokohama Natl Univ, Yokohama, Japan
    Ceram Eng Sci Proc, 3 (411-418):
  • [23] Raman piezo-spectroscopic behavior of aluminum nitride
    Muraki, N
    Sergo, V
    Pezzotti, G
    Katagiri, G
    Meriani, S
    Nishida, T
    APPLIED SPECTROSCOPY, 1997, 51 (11) : 1761 - 1765
  • [24] OXIDATION BEHAVIOR OF HOT-PRESSED ALUMINUM NITRIDE
    BILLY, M
    JARRIGE, J
    LECOMPTE, JP
    MEXMAIN, J
    YEFSAH, S
    REVUE DE CHIMIE MINERALE, 1982, 19 (06): : 673 - 683
  • [25] Mechanism of formation of oxygen-containing layers in aluminum nitride
    Oleinik, GS
    CRYSTALLOGRAPHY REPORTS, 1998, 43 (03) : 419 - 424
  • [26] Effect of oxygen and water vapor on the electrochemical properties of aluminum nitride
    Lesunova, RP
    Pal'guev, SF
    Burmakin, EI
    INORGANIC MATERIALS, 1998, 34 (01) : 38 - 41
  • [27] HIGH-MOLECULAR OXIDATION OF SINTERED ALUMINUM NITRIDE IN OXYGEN
    LAVRENKO, VA
    ALEXEEV, AF
    LUGOVSKAIA, ES
    FRANTSEVICH, IN
    DOKLADY AKADEMII NAUK SSSR, 1980, 255 (03): : 641 - 645
  • [28] LUMINESCENCE STUDIES OF OXYGEN-RELATED DEFECTS IN ALUMINUM NITRIDE
    YOUNGMAN, RA
    HARRIS, JH
    JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1990, 73 (11) : 3238 - 3246
  • [29] GROWTH OF INVERSION DOMAINS IN OXYGEN-RICH ALUMINUM NITRIDE
    MASSLER, O
    SENFTLEBEN, KU
    SOCKEL, HG
    MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 1992, 154 (02): : L19 - L24
  • [30] OXIDATION OF SINTERED ALUMINUM NITRIDE BY OXYGEN AND WATER-VAPOR
    KUROMITSU, Y
    YOSHIDA, H
    OHNO, S
    MASUDA, H
    TAKEBE, H
    MORINAGA, K
    NIPPON SERAMIKKUSU KYOKAI GAKUJUTSU RONBUNSHI-JOURNAL OF THE CERAMIC SOCIETY OF JAPAN, 1992, 100 (01): : 70 - 74