Single-oriented growth of (111) Cu film on thin ZrN/Zr bilayered film for ULSI metallization

被引：0

作者：

Yanagisawa, Hideto ^{[1
]}

Sasaki, Katsutaka ^{[2
]}

Miyake, Hidekazu ^{[2
]}

Abe, Yoshio ^{[2
]}

机构：

[1] Dept. of Elec. and Electron. Eng., Faculty of Engineering, Kitami Institute of Technology, 165 Koen-cho, Kitami 090-8507, Japan

[2] Department of Materials Science, Faculty of Engineering, Kitami Institute of Technology, 165 Koen-cho, Kitami 090-8507, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2000年 / 39卷 / 10期

关键词：

Adhesion - Auger electron spectroscopy - Copper - Crystal orientation - Electric conductivity of solids - Film growth - Interdiffusion (solids) - Interfaces (materials) - Thermodynamic stability - Thickness measurement - Thin films - X ray diffraction analysis;

D O I：

10.1143/jjap.39.5987

中图分类号：

学科分类号：

摘要：

We investigated the influence of ZrN/Zr bilayered film thickness on the (111) Cu orientation and the thermal stability of the Cu/ZrN/Zr/Si contact system by X-ray diffraction and Auger electron spectroscopy analyses. We confirmed that the single-oriented growth of (111) Cu can be realized by interposing the ZrN (400 angstrom)/Zr (200 angstrom) bilayered film between Cu and Si. It was revealed that the (111) Cu/(111) ZrN/(002) Zr/(001) Si contact system is satisfactorily stable up to 600C without undesirable interfacial reaction and interdiffusion, maintaining the low contact resistivity of the ZrSi2 adhesion layer at the Si interface and the single-oriented state of the (111) Cu overlayer.

引用

页码：5987 / 5991

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