Polishing properties of porous silica abrasive on hard disk substrate CMP

被引：0

作者：

Liu P. ^{[1
]}

Lei H. ^{[1
]}

Chen R. ^{[1
]}

机构：

[1] Research Center of Nato-science and Nato-technology, Shanghai University

来源：

International Journal of Abrasive Technology | 2010年 / 3卷 / 03期

关键词：

Abrasive technology; Chemical mechanical polishing; CMP; Hard disk substrate; Planarisation; Porous silica abrasive;

D O I：

10.1504/IJAT.2010.034053

中图分类号：

学科分类号：

摘要：

Chemical mechanical polishing (CMP) is the only technology to provide global planarisation of topography with a low post-planarisation slope. Abrasive is one of the key influencing factors on the surface quality during the CMP. Traditional silica abrasive is easy to cause polishing scratches since it is compact solid particle. In this work the polishing properties of porous silica abrasive in hard disk substrate CMP were investigated. The results show that the polishing down force and rotating speed have a strong influence on the material removal rate and average surface roughness of the hard disk substrate. After polishing with the slurry containing the porous silica abrasive, a smooth hard disk substrate surface was obtained. © 2010 Inderscience Enterprises Ltd.

引用

页码：228 / 237

页数：9

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