Unveiling structural characteristics for ultralow resistance drift in BiSb-Ge2Sb2Te5 materials for phase-change neuron synaptic devices

被引：0
|
作者：
Chen, Chen [1 ,2 ]
Zhu, Jinyi [1 ,2 ]
Chen, Yingqi [1 ,3 ]
Wang, Guoxiang [1 ,2 ,3 ,4 ]
机构：
[1] Laboratory of Infrared Materials and Devices, The Research Institute of Advanced Technologies, Ningbo University, Ningbo,Zhejiang,315211, China
[2] Key Laboratory of Photoelectric Detection Materials and Devices of Zhejiang Province, Ningbo,Zhejiang,315211, China
[3] Engineering Research Center for Advanced Infrared Photoelectric Materials and Devices of Zhejiang Province, Ningbo,Zhejiang,315211, China
[4] International Science & Technology Cooperation Base of Infrared Materials and Devices of Zhejiang Province, Ningbo,Zhejiang,315211, China
来源：
Journal of Alloys and Compounds | 2022年 / 892卷
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [11] Unveiling the structural origin to control resistance drift in phase-change memory materials
    Zhang, Wei
    Ma, Evan
    MATERIALS TODAY, 2020, 41 : 156 - 176
  • [12] Unveiling the structural origin to control resistance drift in phase-change memory materials
    Zhang, Wei
    Ma, Evan
    Materials Today, 2020, 41 : 156 - 176
  • [13] Phase-change behavior of stoichiometric Ge2Sb2Te5 in phase-change random access memory
    Park, Jong-Bong
    Park, Gyeong-Su
    Baik, Hion-Suck
    Lee, Jang-Ho
    Jeong, Hongsik
    Kim, Kinam
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2007, 154 (03) : H139 - H141
  • [14] Thermal conductivity of phase-change material Ge2Sb2Te5
    Lyeo, Ho-Ki
    Cahill, David G.
    Lee, Bong-Sub
    Abelson, John R.
    Kwon, Min-Ho
    Kim, Ki-Bum
    Bishop, Stephen G.
    Cheong, Byung-ki
    APPLIED PHYSICS LETTERS, 2006, 89 (15)
  • [15] Ferroelectric properties of Ge2Sb2Te5 phase-change films
    Gervacio Arciniega, J. J.
    Prokhorov, E.
    Espinoza Beltran, F. J.
    Gonzalez-Hernandez, J.
    APPLIED PHYSICS LETTERS, 2010, 97 (06)
  • [16] Dielectric properties of Ge2Sb2Te5 phase-change films
    Prokhorov, E.
    Gervacio-Arciniega, J. J.
    Luna-Barcenas, G.
    Kovalenko, Y.
    Espinoza-Beltran, F. J.
    Trapaga, G.
    JOURNAL OF APPLIED PHYSICS, 2013, 113 (11)
  • [17] Defect Absorption in Ge2Sb2Te5 Phase-Change Films
    Gotoh, Tamihiro
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2020, 257 (01):
  • [18] Comment on "New Structural Picture of the Ge2Sb2Te5 Phase-Change Alloy" Reply
    Liu, X. Q.
    Li, X. B.
    Zhang, L.
    Cheng, Y. Q.
    Yan, Z. G.
    Xu, M.
    Han, X. D.
    Zhang, S. B.
    Zhang, Z.
    Ma, E.
    PHYSICAL REVIEW LETTERS, 2012, 108 (23)
  • [19] Comparison of Thermal Stability and Electrical Characterization between Ge2Sb2Te5 and Ge1Sb2Te4 Phase-Change Materials
    Liu, Dong
    Xu, Ling
    Liao, Yuanbao
    Dai, Ming
    Zhao, Liang
    Xu, Jun
    Wu, Liangcai
    Ma, Zhongyuan
    Chen, Kunji
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2009, 48 (12)
  • [20] Structural Stability and Phase-Change Characteristics of Ge2Sb2Te5/SiO2 Nano-Multilayered Films
    Jang, M. H.
    Park, S. J.
    Lim, D. H.
    Cho, M. -H.
    Kim, Y. K.
    Yi, H. -J.
    Kim, H. S.
    ELECTROCHEMICAL AND SOLID STATE LETTERS, 2009, 12 (04) : H151 - H154
12345