Unveiling structural characteristics for ultralow resistance drift in BiSb-Ge2Sb2Te5 materials for phase-change neuron synaptic devices

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作者：
Chen, Chen [1 ,2 ]
Zhu, Jinyi [1 ,2 ]
Chen, Yingqi [1 ,3 ]
Wang, Guoxiang [1 ,2 ,3 ,4 ]
机构：
[1] Laboratory of Infrared Materials and Devices, The Research Institute of Advanced Technologies, Ningbo University, Ningbo,Zhejiang,315211, China
[2] Key Laboratory of Photoelectric Detection Materials and Devices of Zhejiang Province, Ningbo,Zhejiang,315211, China
[3] Engineering Research Center for Advanced Infrared Photoelectric Materials and Devices of Zhejiang Province, Ningbo,Zhejiang,315211, China
[4] International Science & Technology Cooperation Base of Infrared Materials and Devices of Zhejiang Province, Ningbo,Zhejiang,315211, China
来源：
Journal of Alloys and Compounds | 2022年 / 892卷
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