Optical constants of cubic GaN, AlN, and AlGaN alloys

被引：0
|
作者：
机构：
[1] Suzuki, Takanobu
[2] Yaguchi, Hiroyuki
[3] Okumura, Hajime
[4] Ishida, Yuuki
[5] Yoshida, Sadafumi
来源：
Suzuki, Takanobu | 2000年 / JJAP, Tokyo卷 / 39期
关键词：
D O I：
10.1143/jjap.39.l497
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [21] Metastable centers in AlGaN/AlN/GaN heterostructures
    Polyakov, Alexander Y.
    Smirnov, Nick B.
    Govorkov, A. V.
    Kozhukhova, E. A.
    Pearton, Stephen J.
    Ren, Fan
    Karpov, S. Yu.
    Shcherbachev, K. D.
    Kolin, N. G.
    Lim, Wantae
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2012, 30 (04):
  • [22] Unintentional gallium incorporation in AlN and its impact on the electrical properties of GaN/AlN and GaN/AlN/AlGaN heterostructures
    Li, Haoran
    Keller, Stacia
    Chan, Silvia H.
    Lu, Jing
    DenBaars, Steven P.
    Mishra, Umesh K.
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2015, 30 (05)
  • [23] An ultra -sensitive AlGaN/AlN/GaN/AlGaN photodetector: Proposal and investigation
    Khaouani, M.
    Hamdoune, A.
    Bencherif, H.
    Kourdi, Z.
    Dehimi, L.
    OPTIK, 2020, 217 (217):
  • [24] Atom probe analysis of AlN interlayers in AlGaN/AlN/GaN heterostructures
    Mazumder, Baishakhi
    Kaun, Stephen W.
    Lu, Jing
    Keller, Stacia
    Mishra, Umesh K.
    Speck, James S.
    APPLIED PHYSICS LETTERS, 2013, 102 (11)
  • [25] Effects of donor density and temperature on electron systems in AlGaN/AlN/GaN and AlGaN/GaN structures
    Zhang Jin-Feng
    Wang Chong
    Zhang Jin-Cheng
    Hao Yue
    CHINESE PHYSICS, 2006, 15 (05): : 1060 - 1066
  • [26] Reliability of GaN HEMTs: Current Degradation in GaN/AlGaN/AlN/GaN HEMT
    Padmanabhan, Balaji
    Vasileska, Dragica
    Goodnick, Stephen M.
    2012 15TH INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS (IWCE), 2012,
  • [27] Evaluation of interpolations of InN, AlN and GaN lattice and elastic constants for their ternary and quaternary alloys
    Morales, F. M.
    Manuel, J. M.
    Garcia, R.
    Reuters, B.
    Kalisch, H.
    Vescan, A.
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2013, 46 (24)
  • [28] Excitons in resonant tunnelling structures based on AlN/GaN/AlN/AlGaN/AlN nitride: spectral dependences and intensities of interband optical transitions
    Boyko, I
    Petryk, M.
    Mykhailyshyn, R.
    UKRAINIAN JOURNAL OF PHYSICAL OPTICS, 2022, 23 (03) : 180 - 191
  • [29] Optical properties of cubic AlGaN
    Fanget, S
    Bru-Chevallier, C
    Guillot, G
    Martinez-Guerrero, E
    Jalabert, D
    Daudin, B
    Mariette, H
    Dang, LS
    Ferro, G
    Monteil, Y
    GAN AND RELATED ALLOYS-2001, 2002, 693 : 431 - 436
  • [30] AlN/GaN and AlGaN/GaN heterostructures grown by HVPE on SiC substrates
    Melnik, YV
    Nikolaev, AE
    Stepanov, SI
    Zubrilov, AS
    Nikitina, IP
    Vassilevski, KV
    Tsvetkov, DV
    Babanin, AI
    Musikhin, YG
    Tretyakov, VV
    Dmitriev, VA
    NITRIDE SEMICONDUCTORS, 1998, 482 : 245 - 249
12345