Optical constants of cubic GaN, AlN, and AlGaN alloys

被引：0
|
作者：
机构：
[1] Suzuki, Takanobu
[2] Yaguchi, Hiroyuki
[3] Okumura, Hajime
[4] Ishida, Yuuki
[5] Yoshida, Sadafumi
来源：
Suzuki, Takanobu | 2000年 / JJAP, Tokyo卷 / 39期
关键词：
D O I：
10.1143/jjap.39.l497
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [1] Optical constants of cubic GaN, AlN, and AlGaN alloys
    Suzuki, T
    Yaguchi, H
    Okumura, H
    Ishida, Y
    Yoshida, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2000, 39 (6A): : L497 - L499
  • [2] Optical phonons in hexagonal GaN/AlN and GaN/AlGaN superlattices
    Davydov, VY
    Smirnov, AN
    Smirnov, MB
    Karpov, SV
    Yagovkina, MA
    Besulkin, AI
    Lundin, WV
    PHYSICA STATUS SOLIDI C - CONFERENCES AND CRITICAL REVIEWS, VOL 2, NO 7, 2005, 2 (07): : 2389 - 2393
  • [3] Absorption coefficient and refractive index of GaN, AlN and AlGaN alloys
    Muth, JF
    Brown, JD
    Johnson, MAL
    Yu, ZH
    Kolbas, RM
    Cook, JW
    Schetzina, JF
    MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, 1999, 4
  • [4] Optical characterization of cubic AlGaN/GaN quantum wells
    Köhler, U
    As, DJ
    Potthast, S
    Khartchenko, A
    Lischka, K
    Noriega, OC
    Meneses, EA
    Tabata, A
    Rodrigues, SCP
    Scolfaro, LMR
    Sipahi, GM
    Leite, JR
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 2002, 192 (01): : 129 - 134
  • [5] Tight-binding branch-point energies and band offsets for cubic InN, GaN, AlN, and AlGaN alloys
    Mourad, Daniel
    JOURNAL OF APPLIED PHYSICS, 2013, 113 (12)
  • [6] Modeling the optical constants of hexagonal GaN, InN, and AlN
    Djurisic, AB
    Li, EH
    JOURNAL OF APPLIED PHYSICS, 1999, 85 (05) : 2848 - 2853
  • [7] Microwave noise in biased AlGaN/GaN and AlGaN/AlN/GaN channels
    Matulionis, A
    Liberis, J
    Ramonas, M
    NOISE AND FLUCTUATIONS, 2005, 780 : 105 - 108
  • [8] Effect of dislocations on electron mobility in AlGaN/GaN and AlGaN/AlN/GaN heterostructures
    Kaun, Stephen W.
    Burke, Peter G.
    Wong, Man Hoi
    Kyle, Erin C. H.
    Mishra, Umesh K.
    Speck, James S.
    APPLIED PHYSICS LETTERS, 2012, 101 (26)
  • [9] Electron irradiation of AlGaN/GaN and AlN/GaN heterojunctions
    Polyakov, A. Y.
    Smirnov, N. B.
    Govorkov, A. V.
    Markov, A. V.
    Pearton, S. J.
    Dabiran, A. M.
    Wowchak, A. M.
    Cui, B.
    Osinsky, A. V.
    Chow, P. P.
    Kolin, N. G.
    Boiko, V. M.
    Merkurisov, D. I.
    APPLIED PHYSICS LETTERS, 2008, 93 (15)
  • [10] Comparison of neutron irradiation effects in AlGaN/AlN/GaN, AlGaN/GaN, and InAlN/GaN heterojunctions
    Polyakov, A. Y.
    Smirnov, N. B.
    Govorkov, A. V.
    Kozhukhova, E. A.
    Pearton, Stephen J.
    Ren, Fan
    Liu, Lu
    Johnson, J. W.
    Lim, Wantae
    Kolin, N. G.
    Veryovkin, S. S.
    Ermakov, V. S.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2012, 30 (06):
12345