80dB dynamic range ∑δ modulator for low-IF GSM receivers

被引：0

作者：

Yang, Pei ^{[1
]}

Yin, Xiumei ^{[1
]}

Yang, Huazhong ^{[1
]}

机构：

[1] Department of Electronic Engineering, Tsinghua University, Beijing 100084, China

来源：

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 2008年 / 29卷 / 02期

关键词：

Analog to digital conversion - Bandwidth - Capacitors - CMOS integrated circuits - Global system for mobile communications - Operational amplifiers - Signal receivers - Signal to noise ratio;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

A high-resolution, 200 kHz signal bandwidth, third-order single-loop single-bit 2A modulator used in low-IF GSM receivers is presented. The modulator is implemented with fully differential switched capacitor circuits in standard 0.6 μm 2P2M CMOS technology. The modulator uses two balanced reference voltages of ±1V, and is driven by a single 26 MHz clock signal. The measurement results show that, with an oversampling ratio of 64, the modulator achieves an 80.6 dB dynamic range, a 71.8 dB peak SNDR, and a 73.9 dB peak SNR in the signal bandwidth of 200kHz. The modulator dissipates 15mW static power from a single 5V supply.

引用

页码：256 / 261

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