Design of a high-precision low-temperature-drift voltage reference

A high-precision low-temperature-drift CMOS voltage reference is presented in this paper. It uses the traditional principle of bandgap reference together with the self-bias structure and startup circuit to get the stable voltage output and good temperature coefficient. The proposed reference has been fabricated in standard 0.6 μm CMOS process. The experiment result manifests that the reference voltage is approximately 1.209 V and the temperature coefficient is 66 ppm/°C. The voltage changes about 2 mV when the supply voltage changes from 2 V to 6 V. Now the voltage reference has been successfully applied in the CMOS DC/DC converters with good performance.