Enhanced photocurrent and spin current in Two-Dimensional MnNCl-MnNI lateral heterostructures

被引：0

作者：

Zhu, Yudong ^{[1
]}

Qu, Junyang ^{[1
]}

Li, Dan ^{[1
]}

Yan, Yue ^{[1
]}

Liu, Bin ^{[1
]}

机构：

[1] Beijing Jiaotong Univ, Dept Phys, Beijing 100044, Peoples R China

来源：

CHEMICAL PHYSICS LETTERS | 2024年 / 857卷

基金：

中国国家自然科学基金;

关键词：

Photogalvanic effect; Infrared detection; Two-dimensional magnetic materials; Photocurrent; Spin current; MnNCl-MnNI lateral heterostructures; ELECTRONICS; SPINTRONICS; VOLTAGE;

D O I：

10.1016/j.cplett.2024.141735

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

First-principles calculations and quantum transport simulations were performed to investigate the photogalvanic effect (PGE) in the high magnetic transition temperature ferromagnetic two-dimensional (2D) semiconductor MnNCl and the 2D lateral MnNI-MnNCl heterostructure. The MnNI-MnNCl heterostructure exhibits significantly enhanced non-centrosymmetric properties, resulting in increased PGE photocurrent and spin current around 0.4 eV. Compared to MnNCl, the photocurrent is amplified by 4-6 orders of magnitude and demonstrates excellent polarization sensitivity, with an extinction ratio reaching 83.92. These results underscore the potential of MnNClMnNI lateral heterostructures for use in self-powered, polarization-sensitive infrared detectors.

引用

页数：8

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