Recess-gate AlGaN/GaN HFET

被引：0

作者：

Zhang, Zhiguo ^{[1
,2
,3
]}

Feng, Zhen ^{[1
,2
]}

Yang, Mengli ^{[1
,2
]}

Feng, Zhihong ^{[1
,2
]}

Mo, Jianghui ^{[1
,2
]}

Cai, Shujun ^{[1
,2
]}

Yang, Kewu ^{[1
,2
]}

机构：

[1] The 13th Research Institute, China Electronics Technology Group Corporation, Shijiazhuang 050051, China

[2] National Key Laboratory of ASIC, Shijiazhuang 050051, China

[3] School of Microelectronics, Xidian University, Xi'an 710071, China

来源：

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 2007年 / 28卷 / 09期

关键词：

Aluminum gallium nitride - Electric potential - Heterojunctions;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

A recessed gate AlGaN/GaN HFET with a total gate length of 100μm is studied. The device demonstrates an increase in transconductance from 260.3 to 314.8mS/mm compared to the unrecessed device, while the saturation current changes slightly. Moreover, the ideality is improved from 2.3 to 1.7. An output power density of 11.74W/mm is achieved at 8GHz and 40V using a load pull system.

引用

页码：1420 / 1423

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