Fabrication of electret using soft x-ray irradiation for silicon microphone

被引:0
|
作者
Goto M. [1 ]
Hagiwara K. [1 ]
Iguchi Y. [2 ]
Yasuno Y. [3 ]
Kodama H. [3 ]
Kidokoro K. [4 ]
Tajima T. [1 ]
机构
[1] NHK Science and Technology Research Laboratories, Setagaya-ku, Tokyo 157-8510
[2] NHK Engineering Services, Inc., Setagaya-ka Tokyo 157-8510
[3] Kobayasi Institute of Physical Research, Kokubunji-shi. Tokyo 185-0022
[4] RION Co, Ltd., Kokubunji-shi. Tokyo 185-8533
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D O I
10.3169/itej.64.1003
中图分类号
学科分类号
摘要
To develop an ultraminiature high-performance microphone for the next generation, we have been studying a silicon microphone. We previously fabricated a single-crystalline silicon microphone using original MEMS technology. The prototype microphone showed excellent acoustic characteristics such as high sensitivity and wide frequency range. Aiming at low-voltage operation, we have recently developed a novel electret charging technique using soft X-ray irradiation. This technique leads to removing the 48-V bias voltage. Experimental results show that an internal inorganic dielectric film keeps electric charges and has excellent heat resistance. This technique exhibits promise for developing a low-voltage operation silicon microphone for purposes ranging from broadcasting to consumer use. MEMS (Micro Electro Mechanical Systems).
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页码:1003 / 1006
页数:3
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