Outphasing Amplifier Using GaN HEMTs

被引：0
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作者：
Sumiyoshi, Takashi [1 ]
Maehata, Takashi [2 ]
机构：
[1] Electric Devices Innovation, Inc., Japan
[2] Transmission Devices Laboratory, Japan
来源：
SEI Technical Review | 2023年 / 96期
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页码：70 / 74
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