Tuning of the Fano effect through a quantum dot in an Aharonov-Bohm interferometer

被引：522
|
作者：
Kobayashi, Kensuke [1 ]
Aikawa, Hisashi [1 ]
Katsumoto, Shingo [1 ]
Iye, Yasuhiro [1 ]
机构：
[1] Institute for Solid State Physics, University of Tokyo, 5-1-5 Kashiwanoha, Chiba 277-8581, Japan
来源：
| 2002年 / American Physical Society卷 / 88期
关键词：
Coulomb blockade - Electric conductance - Electron gas - Electron transport properties - Etching - Fermi level - Heterojunction bipolar transistors - Interferometers - Light interference - Magnetoelectric effects - Semiconductor quantum dots - Tuning;
D O I：
10.1103/PhysRevLett.88.256806
中图分类号：
学科分类号：
摘要：
A tunable Fano system was studied in a quantum dot (QD) in an Aharonov-Bohm interferometer. Delocalization of the discrete levels in the QD due to this effect showed up in the resonating zero-bias peak in the differential conductance. Controlling the Fano line shape by the magnetic field revealed that the Fano parameter will be extended to a complex number.
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